Reliability of 70 nm metamorphic HEMTs. - Maximilian Dammann; Arnulf Leuther; Rüdiger Quay; M. Meng; Helmer Konstanzer; W. Jantz; Michael Mikulla (Microelectron. Reliab., 2004)

InP DHBT Based IC Technology for over 80 Gbit/s Data Communications. - Rachid Driad; Robert E. Makon; Karl Schneider; Ulrich Nowotny; Rolf Aidam; Rüdiger Quay; Michael Schlechtweg; Michael Mikulla; Günter Weimann (IEICE Trans. Electron., 2006)

Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems. - Maximilian Dammann; W. Pletschen; Patrick Waltereit; Wolfgang Bronner; Rüdiger Quay; Stefan Müller; Michael Mikulla; Oliver Ambacher; P. J. van der Wel; S. Murad; T. Rödle; R. Behtash; et al. (Microelectron. Reliab., 2009)

Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs. - M. Cäsar; Maximilian Dammann; Vladimir Polyakov; Patrick Waltereit; Rüdiger Quay; Michael Mikulla; Oliver Ambacher (Microelectron. Reliab., 2011)

Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices. - Matthias Wespel; Martina Baeumler; Vladimir Polyakov; Maximilian Dammann; Richard Reiner; Patrick Waltereit; Rüdiger Quay; Michael Mikulla; Oliver Ambacher (Microelectron. Reliab., 2014)

High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs. - Matthias Wespel; Maximilian Dammann; Vladimir Polyakov; Richard Reiner; Patrick Waltereit; B. Weiss; Rüdiger Quay; Michael Mikulla; Oliver Ambacher (IRPS, 2015)

Degradation of 0.25 μm GaN HEMTs under high temperature stress test. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Wolfgang Bronner; Stephan Maroldt; Helmer Konstanzer; Matthias Wespel; Rüdiger Quay; Michael Mikulla; Andreas Graff; M. Lorenzini; M. Fagerlind; et al. (Microelectron. Reliab., 2015)

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. - Maximilian Dammann; Martina Baeumler; Vladimir Polyakov; Peter Brückner; Helmer Konstanzer; Rüdiger Quay; Michael Mikulla; Andreas Graff; Michél Simon-Najasek (Microelectron. Reliab., 2017)

Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $ mathrm{f}_{ mathrm{t}}=10.2$ GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Sebastian Krause; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2023)

Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz. - Matthias Sinnwell; Michael Dammann; Rachid Driad; Stefano Leone; Michael Mikulla; Rüdiger Quay (DRC, 2024)