Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide. - Michael Nelhiebel; J. Wissenwasser; Thomas Detzel; A. Timmerer; E. Bertagnolli (Microelectron. Reliab., 2005)

On the temperature dependence of NBTI recovery. - Thomas Aichinger; Michael Nelhiebel; Tibor Grasser (Microelectron. Reliab., 2008)

Improved thermal management of low voltage power devices with optimized bond wire positions. - Helmut Köck; Christian Djelassi; Stefano de Filippis; Robert Illing; Michael Nelhiebel; Markus Ladurner; Michael Glavanovics; Dionyz Pogany (Microelectron. Reliab., 2011)

A reliable technology concept for active power cycling to extreme temperatures. - Michael Nelhiebel; Robert Illing; Christoph Schreiber; S. Wöhlert; S. Lanzerstorfer; Markus Ladurner; C. Kadow; Stefan Decker; Donald Dibra; H. Unterwalcher; M. Rogalli; W. Robl; et al. (Microelectron. Reliab., 2011)

Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. - Gregor Pobegen; Thomas Aichinger; Tibor Grasser; Michael Nelhiebel (Microelectron. Reliab., 2011)

Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices. - Stefano de Filippis; Helmut Köck; Michael Nelhiebel; Vladimír Kosel; Stefan Decker; Michael Glavanovics; Andrea Irace (Microelectron. Reliab., 2012)

High temperature storage reliability investigation of the Al-Cu wire bond interface. - Rainer Pelzer; Michael Nelhiebel; Robert Zink; Stefan Wöhlert; Alice Lassnig; Golta Khatibi (Microelectron. Reliab., 2012)

Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. - Thomas Aichinger; Michael Nelhiebel; Tibor Grasser (Microelectron. Reliab., 2013)

Effective and reliable heat management for power devices exposed to cyclic short overload pulses. - Michael Nelhiebel; Robert Illing; Thomas Detzel; S. Wöhlert; B. Auer; S. Lanzerstorfer; M. Rogalli; W. Robl; Stefan Decker; J. Fugger; Markus Ladurner (Microelectron. Reliab., 2013)

Modeling fatigue life of power semiconductor devices with ε-N fields. - Olivia Bluder; Kathrin Plankensteiner; Michael Nelhiebel; Walther Heinz; Christian Leitner (WSC, 2014)

Inspection of electrical interconnections within power ICs via magneto-optical imaging. - Florian W. Dietachmayr; Patrick A. Hölzl; Bernhard G. Zagar; Michael Nelhiebel (I2MTC, 2015)

High cycle fatigue testing of thermosonic ball bonds. - Alice Lassnig; Martin Lederer; Golta Khatibi; Rainer Pelzer; W. Robl; Michael Nelhiebel (Microelectron. Reliab., 2017)

Exploring the thermal limit of GaN power devices under extreme overload conditions. - Florian Peter Pribahsnik; Michael Nelhiebel; M. Mataln; Mirko Bernardoni; G. Prechtl; Frank Altmann; David Poppitz; A. Lindemann (Microelectron. Reliab., 2017)

Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures. - Florian Peter Pribahsnik; Mirko Bernardoni; Michael Nelhiebel; M. Mataln; A. Lindemann (Microelectron. Reliab., 2018)

Characterization of cyclic delamination behavior of thin film multilayers. - Thomas Walter; Golta Khatibi; Michael Nelhiebel; M. Stefenelli (Microelectron. Reliab., 2018)

A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests. - D. Wieland; S. Ofner; Manuel Stabentheiner; Boris Butej; Christian Koller; J. Sun; Andrea Minetto; Korbinian Reiser; Oliver Häberlen; Michael Nelhiebel; Michael Glavanovics; Dionyz Pogany; et al. (IRPS, 2023)