A monolithic Ka-band 0.25 mu m GaAs MESFET transmitter for high volume production. - Huei Wang; Daniel C. Yang; Michael V. Aust; Edward A. Rezek; Barry R. Allen; Louis A. Fletcher; Robert C. Becker (IEEE J. Solid State Circuits, 1992)

A 2.8-W Q-Band High-Efficiency Power Amplifier. - Michael V. Aust; Arvind K. Sharma; Owen Fordham; Ronald Grundbacher; Richard To; Roger S. Tsai; Richard Lai 002 (IEEE J. Solid State Circuits, 2006)