Characterization and modeling of charge trapping: From single defects to devices. - Tibor Grasser; Gerhard Rzepa; Michael Waltl; Wolfgang Goes; Karina Rott; Gunnar Andreas Rott; Hans Reisinger; Jacopo Franco; Ben Kaczer (ICICDT, 2014)

Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. - Yury Illarionov; Michael Waltl; Anderson D. Smith; Sam Vaziri; Mikael Östling; Max Christian Lemme; Tibor Grasser (ESSDERC, 2015)

Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. - Yury Illarionov; Michael Waltl; Anderson D. Smith; Sam Vaziri; Mikael Östling; Thomas Mueller; Max Christian Lemme; Tibor Grasser (IRPS, 2015)

Physical modeling of the hysteresis in M0S2 transistors. - Theresia Knobloch; Gerhard Rzepa; Yury Yu. Illarionov; Michael Waltl; Franz Schanovsky; Markus Jech; Bernhard Stampfer; Marco M. Furchi; Thomas Muller; Tibor Grasser (ESSDERC, 2017)

Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio. - Yury Yu. Illarionov; Kirby K. H. Smithe; Michael Waltl; Ryan W. Grady; Sanchit Deshmukh; Eric Pop; Tibor Grasser (DRC, 2018)

Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. - Tibor Grasser; Bernhard Stampfer; Michael Waltl; Gerhard Rzepa; Karl Rupp; Franz Schanovsky; Gregor Pobegen; Katja Puschkarsky; Hans Reisinger; Barry J. O'Sullivan; Ben Kaczer (IRPS, 2018)

Reliability of next-generation field-effect transistors with transition metal dichalcogenides. - Yury Yu. Illarionov; Aday J. Molina-Mendoza; Michael Waltl; Theresia Knobloch; Marco M. Furchi; Thomas Mueller; Tibor Grasser (IRPS, 2018)

A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. - Ben Kaczer; Jacopo Franco; Pieter Weckx; Philippe Roussel; Vamsi Putcha; Erik Bury; Marko Simicic; Adrian Vaisman Chasin; Dimitri Linten; Bertrand Parvais; Francky Catthoor; Gerhard Rzepa; et al. (Microelectron. Reliab., 2018)

Comphy - A compact-physics framework for unified modeling of BTI. - Gerhard Rzepa; Jacopo Franco; Barry J. O'Sullivan; A. Subirats; Marko Simicic; Geert Hellings; Pieter Weckx; Markus Jech; Theresia Knobloch; Michael Waltl; Philippe Roussel; Dimitri Linten; et al. (Microelectron. Reliab., 2018)

Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits. - Ambika Prasad Shah; Michael Waltl (ICECS, 2019)

Utilizing NBTI for Operation Detection of Integrated Circuits. - Ambika Prasad Shah; Amirhossein Moshrefi; Michael Waltl (VDAT, 2019)

The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. - Tibor Grasser; Ben Kaczer; Barry J. O'Sullivan; Gerhard Rzepa; Bernhard Stampfer; Michael Waltl (IRPS, 2020)

Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. - Alexander Grill; Erik Bury; Jakob Michl; Stanislav Tyaginov; Dimitri Linten; Tibor Grasser; Bertrand Parvais; Ben Kaczer; Michael Waltl; Iuliana P. Radu (IRPS, 2020)

Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. - Jakob Michl; Alexander Grill; Dieter Claes; Gerhard Rzepa; Ben Kaczer; Dimitri Linten; Iuliana P. Radu; Tibor Grasser; Michael Waltl (IRPS, 2020)

Defect Spectroscopy in SiC Devices. - Michael Waltl (IRPS, 2020)

Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata. - Syed Farah Naz; Ambika Prasad Shah; Suhaib Ahmed; Patrick Girard 001; Michael Waltl (ETS, 2021)

CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. - Tibor Grasser; Barry J. O'Sullivan; Ben Kaczer; Jacopo Franco; Bernhard Stampfer; Michael Waltl (IRPS, 2021)

Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities. - Christoph Wilhelmer; Dominic Waldhoer; Markus Jech; Al-Moatasem Bellah El-Sayed; Lukas Cvitkovich; Michael Waltl; Tibor Grasser (ESSDERC, 2022)

Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. - Christian Bogner; Tibor Grasser; Michael Waltl; Hans Reisinger; Christian Schlünder (IRPS, 2022)

Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. - Alexander Grill; V. John; Jakob Michl; A. Beckers; Erik Bury; Stanislav Tyaginov; Bertrand Parvais; Adrian Vaisman Chasin; Tibor Grasser; Michael Waltl; Ben Kaczer; Bogdan Govoreanu (IRPS, 2022)

WDM-Conscious Synaptic Receptor Assisted by SOA+EAM. - Margareta V. Stephanie; Michael Waltl; Tibor Grasser; Bernhard Schrenk (OFC, 2022)

Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. - Christian Bogner; Christian Schlünder; Michael Waltl; Hans Reisinger; Tibor Grasser (IRPS, 2023)

A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. - Tibor Grasser; Maximilian W. Feil; Katja Waschneck; Hans Reisinger; Judith Berens; Dominic Waldhör; A. Vasilev; Michael Waltl; Thomas Aichinger; M. Bockstedte; Wolfgang Gustin; Gregor Pobegen (IRPS, 2024)

Neural Network with Optical Frequency-Coded ReLU. - Margareta V. Stephanie; Lam Pham; Alexander Schindler; Michael Waltl; Tibor Grasser; Bernhard Schrenk (OFC, 2024)

Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery. - Bernhard Ruch; Rajarshi Roy Chaudhuri; Boris Butej; Joao Gomes; Manuel Stabentheiner; Korbinian Reiser; Christian Koller; Dionyz Pogany; Clemens Ostermaier; Michael Waltl (IRPS, 2025)