Analysis of ESD failure mechanism in 65nm bulk CMOS ESD NMOSFETs with ESD implant. - David Alvarez; Michel J. Abou-Khalil; Christian Russ; Kiran V. Chatty; Robert Gauthier 002; D. Kontos; Junjun Li; Christopher Seguin; Ralph Halbach (Microelectron. Reliab., 2006)

Design optimization of gate-silicided ESD NMOSFETs in a 45 nm bulk CMOS technology. - David Alvarez; Kiran V. Chatty; Christian Russ; Michel J. Abou-Khalil; Junjun Li; Robert Gauthier 002; Kai Esmark; Ralph Halbach; Christopher Seguin (Microelectron. Reliab., 2009)