Novel techniques for dopant contrast analysis on real IC structures. - Joerg Jatzkowski; Michél Simon-Najasek; Frank Altmann (Microelectron. Reliab., 2012)

Advanced FIB sample preparation techniques for high resolution TEM investigations of HEMT structures. - Michél Simon-Najasek; Susanne Hübner; Frank Altmann; Andreas Graff (Microelectron. Reliab., 2014)

Detection and analysis of stress-induced voiding in Al-power lines by acoustic GHz-microscopy. - Sebastian Brand 001; Michél Simon-Najasek; Michael Kögel; Joerg Jatzkowski; R. Portius; Frank Altmann (Microelectron. Reliab., 2016)

Correlation of gate leakage and local strain distribution in GaN/AlGaN HEMT structures. - Mikael Broas; Andreas Graff; Michél Simon-Najasek; David Poppitz; Frank Altmann; Helmut Jung; Hervé Blanck (Microelectron. Reliab., 2016)

Novel failure mode of chip corrosion at automotive HALL sensor devices under multiple stress conditions. - Michél Simon-Najasek; Georg Lorenz; Achim Lindner; Frank Altmann (Microelectron. Reliab., 2016)

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications. - Maximilian Dammann; Martina Baeumler; Vladimir Polyakov; Peter Brückner; Helmer Konstanzer; Rüdiger Quay; Michael Mikulla; Andreas Graff; Michél Simon-Najasek (Microelectron. Reliab., 2017)

High resolution physical analysis of ohmic contact formation at GaN-HEMT devices. - Andreas Graff; Michél Simon-Najasek; Frank Altmann; Ján Kuzmík; Dagmar Gregusová; S. Hascik; Helmut Jung; T. Baur; Jan Grünenpütt; Hervé Blanck (Microelectron. Reliab., 2017)

Physical failure analysis methods for wide band gap semiconductor devices. - Andreas Graff; Michél Simon-Najasek; David Poppitz; Frank Altmann (IRPS, 2018)

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology. - Maximilian Dammann; Martina Baeumler; Peter Brückner; Tobias Kemmer; Helmer Konstanzer; Andreas Graff; Michél Simon-Najasek; Rüdiger Quay (Microelectron. Reliab., 2018)

New Access to Soft Breakdown Parameters of Low-k Dielectrics Through Localisation-Based Analysis. - Norbert Herfurth; Anne Beyreuther; Elham Amini; Christian Boit; Michél Simon-Najasek; Susanne Hübner; Frank Altmann; R. Herfurth; Chen Wu; Ingrid De Wolf; Kris Croes (IRPS, 2019)

Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling. - Enrico Zanoni; Matteo Meneghini; Gaudenzio Meneghesso; Fabiana Rampazzo; Daniele Marcon; Veronica Gao Zhan; Francesca Chiocchetta; Andreas Graff; Frank Altmann; Michél Simon-Najasek; David Poppitz (IRPS, 2020)

Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress. - Maximilian Dammann; Martina Baeumler; Tobias Kemmer; Helmer Konstanzer; Peter Brückner; Sebastian Krause; Andreas Graff; Michél Simon-Najasek (IRPS, 2021)