Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. - Alexander Makarov; Dimitri Linten; Stanislav Tyaginov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Markus Jech; Tibor Grasser (ESSDERC, 2019)

Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the {VG, VD} bias space. - Erik Bury; Adrian Vaisman Chasin; Michiel Vandemaele; Simon Van Beek; Jacopo Franco; Ben Kaczer; Dimitri Linten (IRPS, 2019)

Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. - Alexander Makarov; Ben Kaczer; Philippe Roussel; Adrian Vaisman Chasin; Alexander Grill; Michiel Vandemaele; Geert Hellings; Al-Moatasem El-Sayed; Tibor Grasser; Dimitri Linten; Stanislav Tyaginov (IRPS, 2019)

Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Zlatan Stanojevic; Alexander Makarov; Adrian Vaisman Chasin; Erik Bury; Hans Mertens; Dimitri Linten; Guido Groeseneken (IRPS, 2019)

A Compact Physics Analytical Model for Hot-Carrier Degradation. - Stanislav Tyaginov; Alexander Grill; Michiel Vandemaele; Tibor Grasser; Geert Hellings; Alexander Makarov; Markus Jech; Dimitri Linten; Ben Kaczer (IRPS, 2020)

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation. - Michiel Vandemaele; Kai-Hsin Chuang; Erik Bury; Stanislav Tyaginov; Guido Groeseneken; Ben Kaczer (IRPS, 2020)

The properties, effect and extraction of localized defect profiles from degraded FET characteristics. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Jacopo Franco; Robin Degraeve; Adrian Vaisman Chasin; Zhicheng Wu; Erik Bury; Yang Xiang; Hans Mertens; Guido Groeseneken (IRPS, 2021)

Physics-based device aging modelling framework for accurate circuit reliability assessment. - Zhicheng Wu; Jacopo Franco; Brecht Truijen; Philippe Roussel; Stanislav Tyaginov; Michiel Vandemaele; Erik Bury; Guido Groeseneken; Dimitri Linten; Ben Kaczer (IRPS, 2021)

A BSIM-Based Predictive Hot-Carrier Aging Compact Model. - Yang Xiang; Stanislav Tyaginov; Michiel Vandemaele; Zhicheng Wu; Jacopo Franco; Erik Bury; Brecht Truijen; Bertrand Parvais; Dimitri Linten; Ben Kaczer (IRPS, 2021)

Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets. - Erik Bury; Adrian Vaisman Chasin; Ben Kaczer; Michiel Vandemaele; Stanislav Tyaginov; Jacopo Franco; Romain Ritzenthaler; Hans Mertens; Pieter Weckx; N. Horiguchi; Dimitri Linten (IRPS, 2022)

A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. - Javier Diaz-Fortuny; Pablo Saraza-Canflanca; Erik Bury; Michiel Vandemaele; Ben Kaczer; Robin Degraeve (IRPS, 2022)

On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. - Stanislav Tyaginov; Aryan Afzalian; Alexander Makarov; Alexander Grill; Michiel Vandemaele; Maksim Cherenev; Mikhail I. Vexler; Geert Hellings; Ben Kaczer (IRPS, 2022)

Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. - Stanislav Tyaginov; Alexander Makarov; Al-Moatasem Bellah El-Sayed; Adrian Vaisman Chasin; Erik Bury; Markus Jech; Michiel Vandemaele; Alexander Grill; An De Keersgieter; Mikhail I. Vexler; Geert Eneman; Ben Kaczer (IRPS, 2022)

Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. - Michiel Vandemaele; Ben Kaczer; Stanislav Tyaginov; Erik Bury; Adrian Vaisman Chasin; Jacopo Franco; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2022)

Reliability challenges in Forksheet Devices: (Invited Paper). - Erik Bury; Michiel Vandemaele; Jacopo Franco; Adrian Chasin; Stanislav Tyaginov; A. Vandooren; Romain Ritzenthaler; Hans Mertens; Javier Diaz-Fortuny; N. Horiguchi; Dimitri Linten; Ben Kaczer (IRPS, 2023)

Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. - Michiel Vandemaele; Ben Kaczer; Erik Bury; Jacopo Franco; Adrian Chasin; Alexander Makarov; Hans Mertens; Geert Hellings; Guido Groeseneken (IRPS, 2023)

Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. - Y. Guo; Robin Degraeve; Michiel Vandemaele; Pablo Saraza-Canflanca; Jacopo Franco; Ben Kaczer; Erik Bury; Ingrid Verbauwhede (IRPS, 2024)

A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-A. - Dishant Sangani; Michiel Vandemaele; Stanislav Tyaginov; Erik Bury; Ben Kaczer; Georges G. E. Gielen (IRPS, 2025)