A 4-Mb pseudo SRAM operating at 2.6+or-1 V with 3- mu A data retention current. - Katsuyuki Sato; Kanehide Kenmizaki; Shoji Kubono; Toshio Mochizuki; Hidetomo Aoyagi; Michitaro Kanamitsu; Soichi Kunito; Hiroyuki Uchida; Yoshihiko Yasu; Atsushi Ogishima; Sho Sano; Hiroshi Kawamoto (IEEE J. Solid State Circuits, 1991)

A 256-Mb multilevel flash memory with 2-MB/s program rate for mass storage applications. - Atsushi Nozoe; Hiroaki Kotani; Tetsuya Tsujikawa; Keiichi Yoshida; Kazunori Furusawa; Masataka Kato; Toshiaki Nishimoto; Hitoshi Kume; Hideaki Kurata; Naoki Miyamoto; Shoji Kubono; Michitaro Kanamitsu; et al. (IEEE J. Solid State Circuits, 1999)

A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput. - Hideaki Kurata; Shunichi Saeki; Takashi Kobayashi 002; Yoshitaka Sasago; Tsuyoshi Arigane; Keiichi Yoshida; Yoshinori Takase; Takayuki Yoshitake; Osamu Tsuchiya; Yoshinori Ikeda; Shunichi Narumi; Michitaro Kanamitsu; et al. (IEICE Trans. Electron., 2006)