Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs. - Alain Bravaix; Didier Goguenheim; Mickael Denais; Vincent Huard; C. R. Parthasarathy; F. Perrier; Nathalie Revil; E. Vincent (Microelectron. Reliab., 2005)

A thorough investigation of MOSFETs NBTI degradation. - Vincent Huard; Mickael Denais; F. Perrier; Nathalie Revil; C. R. Parthasarathy; Alain Bravaix; E. Vincent (Microelectron. Reliab., 2005)

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. - G. Ribes; S. Bruyère; Mickael Denais; Frederic Monsieur; Vincent Huard; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. - G. Ribes; S. Bruyère; Mickael Denais; David Roy 001; Gérard Ghibaudo (Microelectron. Reliab., 2005)

NBTI degradation: From physical mechanisms to modelling. - Vincent Huard; Mickael Denais; C. R. Parthasarathy (Microelectron. Reliab., 2006)

Designing in reliability in advanced CMOS technologies. - C. R. Parthasarathy; Mickael Denais; Vincent Huard; G. Ribes; David Roy 001; Chloe Guérin; F. Perrier; E. Vincent; Alain Bravaix (Microelectron. Reliab., 2006)

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation. - C. R. Parthasarathy; Alain Bravaix; Chloe Guérin; Mickael Denais; Vincent Huard (PATMOS, 2007)