MBE growth and processing of diluted nitride quantum well lasers on GaAs (111)B. - Javier Miguel-Sánchez; Álvaro de Guzmán; José María Ulloa; Miguel Montes 001; Adrián Hierro; Elías Muñoz (Microelectron. J., 2006)

Implications of gate-edge electric field in AlGaN/GaN high electron mobility transistors during OFF-state degradation. - Huarui Sun; Miguel Montes Bajo; Michael J. Uren; Martin Kuball (Microelectron. Reliab., 2014)