Electrical characteristics of high-energy proton irradiated ultra-thin gate oxides. - Joan Marc Rafí; B. Vergnet; Francesca Campabadal; Celeste Fleta; Luis Fonseca; Manuel Lozano 003; C. Martínez; Miguel Ullán (Microelectron. Reliab., 2002)

Test structure assembly for bump bond yield measurement on high density flip chip technologies. - Miguel Ullán; Manuel Lozano 003; Mokhtar Chmeissani; G. Blanchot; Enric Cabruja; J. García; M. Maiorino; Ricardo Martínez; Giulio Pellegrini; Carles Puigdengoles (Microelectron. Reliab., 2006)

Simulation methodology for dose effects in lateral DMOS transistors. - Pablo Fernández-Martínez; Francisco Rogelio Palomo; S. Díez; Salvador Hidalgo; Miguel Ullán; David Flores; Roland Sorge (Microelectron. J., 2012)

Mechanism of anomalous recovery in advanced SiGe bipolar transistors after low dose rate irradiation for very high total doses. - V. S. Pershenkov; Miguel Ullán; M. Wilder; H. Spieler; E. Spencer; S. Rescia; F. M. Newcomer; F. Martinez-McKinney; W. Kononenko; A. A. Grillo; S. Díez (Microelectron. Reliab., 2014)