An 18-GHz continuous-time Σ-Δ analog-digital converter implemented in InP-transferred substrate HBT technology. - Shrinivasan Jaganathan; Sundararajan Krishnan; Dino Mensa; Thomas Mathew; Yoram Betser; Yun Wei; Dennis W. Scott; Miguel Urteaga; Mark J. W. Rodwell (IEEE J. Solid State Circuits, 2001)

G-band (140-220-GHz) InP-based HBT amplifiers. - Miguel Urteaga; Dennis W. Scott; Sundararajan Krishnan; Yun Wei; Mattias Dahlström; Zach Griffith; Navin Parthasarathy; Mark J. W. Rodwell (IEEE J. Solid State Circuits, 2003)

Transistor and circuit design for 100-200-GHz ICs. - Zach Griffith; Yingda Dong; Dennis W. Scott; Yun Wei; Navin Parthasarathy; Mattias Dahlström; Christoph Kadow; Vamsi Paidi; Mark J. W. Rodwell; Miguel Urteaga; Richard Pierson; Petra Rowell; et al. (IEEE J. Solid State Circuits, 2005)

InP HBT IC Technology for Terahertz Frequencies: Fundamental Oscillators Up to 0.57 THz. - Munkyo Seo; Miguel Urteaga; Jonathan Hacker; Adam Young; Zach Griffith; Vibhor Jain; Richard Pierson; Petra Rowell; Anders Skalare; Alejandro Peralta; Robert Lin; David Pukala; et al. (IEEE J. Solid State Circuits, 2011)

Millimeter-Wave Series Power Combining Using Sub-Quarter-Wavelength Baluns. - Hyun-Chul Park; Saeid Daneshgar; Zach Griffith; Miguel Urteaga; Byung-Sung Kim; Mark J. W. Rodwell (IEEE J. Solid State Circuits, 2014)

A 529 GHz dynamic frequency divider in 130 nm InP HBT process. - Munkyo Seo; John Hacker; Miguel Urteaga; Anders Skalare; Mark J. W. Rodwell (IEICE Electron. Express, 2015)

An Ultra-Low-Power Dual-Polarization Transceiver Front-End for 94-GHz Phased Arrays in 130-nm InP HBT. - Seong-Kyun Kim; Robert Maurer; Arda Simsek; Miguel Urteaga; Mark J. W. Rodwell (IEEE J. Solid State Circuits, 2017)

InP HBT Technologies for THz Integrated Circuits. - Miguel Urteaga; Zach Griffith; Munkyo Seo; Jonathan Hacker; Mark J. W. Rodwell (Proc. IEEE, 2017)

8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT Technology. - Ahmed S. H. Ahmed; Arda Simsek; Miguel Urteaga; Mark J. W. Rodwell (BCICTS, 2018)

Design of InP Segmented-collector DHBTs with Reduced Collector Transit Time τc for Large Power Bandwidth Power Amplifiers. - Yihao Fang; Jonathan P. Sculley; Miguel E. Urteaga; Andy D. Carter; Paul D. Yoder; Mark J. W. Rodwell (DRC, 2018)

50 - 250 GHz High-Gain Power Amplifier MMICs in 250-nm InP HBT. - Zach Griffith; Miguel Urteaga; Petra Rowell; Lan Tran; Bobby Brar (BCICTS, 2019)

Monte Carlo Investigation of Traveling Accumulation Layers in InP Heterojunction Bipolar Transistor Power Amplifiers. - Jonathan P. Sculley; Brian Markman; Utku Soylu; Yihao Fang; Miguel E. Urteaga; Andy D. Carter; Mark J. W. Rodwell; Paul D. Yoder (BCICTS, 2019)

Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact. - Andrew D. Carter; Miguel E. Urteaga; Petra Rowell; Joshua Bergman; Andrea Arias (DRC, 2019)

First Principles Study of Collector Transit Time Modulation in Double Heterojunction Bipolar Transistors. - Jonathan P. Sculley; Yihao Fang; Brian Markman; Miguel E. Urteaga; Andy D. Carter; Mark J. W. Rodwell; Paul D. Yoder (DRC, 2019)

A Dual-Conversion Front-End with a W-Band First Intermediate Frequency for 1-30 GHz Reconfigurable Transceivers. - Arda Simsek; Seong-Kyun Kim; Ahmed S. H. Ahmed; Robert Maurer; Miguel Urteaga; Mark J. W. Rodwell (RWS, 2019)

High-Gain 500-GHz InP HBT Power Amplifiers. - Jerome Cheron; Rob D. Jones; Richard A. Chamberlin; Dylan F. Williams; Miguel E. Urteaga; Kassiopeia A. Smith; Nicholas R. Jungwirth; Bryan T. L. Bosworth; Christian J. Long; Nathan D. Orloff; Peter H. Aaen; Ari D. Feldman (BCICTS, 2021)

InP HBT Technologies for sub-THz Communications. - Miguel Urteaga; Zach Griffith; A. Arias-Purdue; A. Carter; Petra Rowell; J. Hacker; B. Brar (VLSI Technology and Circuits, 2022)

Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz. - Rob D. Jones; Jerome Cheron; Bryan T. L. Bosworth; Benjamin F. Jamroz; Dylan F. Williams; Miguel E. Urteaga; Ari D. Feldman; Peter H. Aaen (BCICTS, 2023)

A Two-stage, Two-way-combined, 220-GHz Power Amplifier With 17.1% PAE in a 250-nm InP HBT Process. - Eythan Lam; Jeff Shieh-Chieh Chien; Petra Rowell; Miguel Urteaga; James F. Buckwalter (BCICTS, 2024)