Soft-Error Susceptibility in Flip-Flop in EUV 7 nm Bulk-FinFET Technology. - Taiki Uemura; Byungjin Chung; Jeongmin Jo; Mijoung Kim; Dalhee Lee; Gunrae Kim; Seungbae Lee; Taesjoong Song; Hwasung Rhee; Brandon Lee; Jaehee Choi (IRPS, 2021)

4nm Voltage Auto-Tracking SRAM Pulse Generator with Fully RC Optimized Row Auto-Tracking Write Assist Circuits. - Inhak Lee; Dongwook Seo; Yunrong Li; Mijoung Kim; Sangyeop Baeck (VLSI Technology and Circuits, 2022)

A 4.13-GHz UHS Pseudo Two-Port SRAM With BL Charge Time Reduction and Flying Word-Line for HPC Applications in 4-nm FinFET Technology. - Jeongkyun Kim; Byungho Yook; Youngo Lee; Taemin Choi; Kyuwon Choi; Chanho Lee; Juchang Lee; Hyeongcheol Kim; Seok Yun; Changhoon Do; Minwoo Kwak; Mijoung Kim; et al. (IEEE J. Solid State Circuits, 2024)