Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications. - Franz P. G. Fengler; Milan Pesic; Sergej Starschich; Theodor Schneller; Ulrich Böttger; Tony Schenk; Min Hyuk Park; Thomas Mikolajick; Uwe Schroeder (ESSDERC, 2016)

Impact of field cycling on HfO2 based non-volatile memory devices. - Uwe Schroeder; Milan Pesic; Tony Schenk; Halid Mulaosmanovic; Stefan Slesazeck; Johannes Ocker; Claudia Richter; Ekaterina Yurchuk; K. Khullar; Johannes Müller; Patrick Polakowski; E. D. Grimley; et al. (ESSDERC, 2016)

Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories. - Milan Pesic; Michael Hoffmann 008; Claudia Richter; Stefan Slesazeck; Thomas Kämpfe; Lukas M. Eng; Thomas Mikolajick; Uwe Schroeder (ESSDERC, 2017)

Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM. - Milan Pesic; Michael Hoffmann 008; Claudia Richter; Stefan Slesazeck; Uwe Schroeder; Thomas Mikolajick (NVMTS, 2017)

Gate stack engineering for emerging polarization based non-volatile memories. - Milan Pesic (BoD Books on Demand, 2017)

Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors. - Felix Winkler; Milan Pesic; Claudia Richter; Michael Hoffmann 008; Thomas Mikolajick; Johann W. Bartha (DRC, 2019)

Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. - Andrea Padovani; Milan Pesic; Mondol Anik Kumar; Pieter Blomme; Alexandre Subirats; Senthil Vadakupudhupalayam; Zunaid Baten; Luca Larcher (IRPS, 2019)

Variability sources and reliability of 3D - FeFETs. - Milan Pesic; Bastien Beltrando; Andrea Padovani; Shruba Gangopadhyay; Muthukumar Kaliappan; Michael Haverty; Marco A. Villena; Enrico Piccinini; Matteo Bertocchi; Tony Chiang; Luca Larcher; Jack Strand; et al. (IRPS, 2021)

Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents. - Milan Pesic; Andrea Padovani; Tommaso Rollo; Bastien Beltrando; Jack Strand; Parnika Agrawal; Alexander L. Shluger; Luca Larcher (IMW, 2022)

Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). - Andrea Padovani; Milan Pesic; Federico Nardi; Valerio Milo; Luca Larcher; Mondol Anik Kumar; Zunaid Baten (IRPS, 2022)

Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation. - Milan Pesic; Bastien Beltrando; Andrea Padovani; Toshihiko Miyashita; Nam-Sung Kim; Luca Larcher (IRPS, 2022)

The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging. - Lorenzo Benatti; Sara Vecchi; Milan Pesic; Francesco Maria Puglisi (IRPS, 2023)

Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND. - Milan Pesic; Bastien Beltrando; Tommaso Rollo; Cristian Zambelli; Andrea Padovani; Rino Micheloni; Rita Maji; Lisa Enman; Mark Saly; Yang Ho Bae; Jung-Bae Kim; Dong Kil Yim; et al. (IRPS, 2023)

Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. - Bastien Beltrando; Marco A. Villena; Mondol Anik Kumar; Shruba Gangopadhyay; Deepak Kamalanathan; E. Smith; Nasrin Kazem; Ghazal Saheli; Stephen Weeks; Michael Haverty; Muthukumar Kaliappan; Andrea Padovani; et al. (IMW, 2024)

Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors. - Bastien Beltrando; Bruno Coppolelli; Jung-Bae Kim; Yang Ho Bae; Stephen Weeks; Lisa Enman; Ghazal Saheli; Davide Cornigli; Stuart Brinkley; Mark Saly; Luca Larcher; Dong Kil Yim; et al. (IRPS, 2024)

Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL. - Andrea Palmieri; Mahdi Tavakoli; Chi Ching; Wenkai Zheng; Shi You; Xiaodong Zhang; Davide Cornigli; Michael Haverty; Navneet Singh; Luca Larcher; Monika Jamieson; Ajay Bhatnagar; et al. (IRPS, 2024)

Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study. - Tommaso Rollo; Hansel Lo; Luca Larcher; Christopher Olsen; Milan Pesic (IRPS, 2024)

Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability. - Bruno Coppolelli; Davide Cornigli; Zheyuan Chen; Andrea Padovani; Sara Vecchi; Yanliu Dang; Luc Thomas; Luca Vandelli; Jianxin Lei; Naomi Yoshida; Renu Whig; Federico Nardi; et al. (IRPS, 2025)

Investigation of the Impact of Hydrogen Defects on the VT shift in Back-Gate IGZO TFTs. - Mohammad Fathi; Md Abdullah Al Mamun; Rodolfo A. Rodriguez-Davila; Shumiya Alam; Jongchan Kim; Tanvir Haider Pantha; Milan Pesic; Manuel Quevedo-Lopez; Kyeongjae Cho; Sourav Dutta; Chadwin D. Young (IRPS, 2025)

Reliability and Integration Challenges Underlying New Material Introduction into Memory Technology (Invited). - Milan Pesic (IRPS, 2025)