Czochralski-grown nitrogen-doped silicon: Electrical properties of MOS structures; A positron annihilation study. - L. Harmatha; Milan Tapajna; V. Slugen; P. Ballo; P. Písecný; J. Sik; G. Kögel (Microelectron. J., 2006)

AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes. - Martin Kuball; Milan Tapajna; Richard J. T. Simms; Mustapha Faqir; Umesh K. Mishra (Microelectron. Reliab., 2011)

The role of surface barrier oxidation on AlGaN/GaN HEMTs reliability. - Milan Tapajna; Nicole Killat; Uttiya Chowdhury; Jose L. Jimenez; Martin Kuball (Microelectron. Reliab., 2012)