Simulation study on scaling limit of silicon tunneling field-effect transistor under tunneling-predominance. - Seongjae Cho; Hyungjin Kim 001; Min-Chul Sun; In Man Kang; Byung-Gook Park; James S. Harris Jr. (IEICE Electron. Express, 2012)

Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region. - Hyungjin Kim 001; Min-Chul Sun; Hyun Woo Kim 005; Sang Wan Kim; Garam Kim; Byung-Gook Park (IEICE Trans. Electron., 2012)

Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors. - Min-Chul Sun; Hyun Woo Kim 005; Sang Wan Kim; Garam Kim; Hyungjin Kim 001; Byung-Gook Park (IEICE Trans. Electron., 2012)

L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications. - Sang Wan Kim; Woo Young Choi; Min-Chul Sun; Hyun Woo Kim 005; Jong-Ho Lee 002; Hyungcheol Shin; Byung-Gook Park (IEICE Trans. Electron., 2013)

Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel. - Min-Chul Sun; Sang Wan Kim; Garam Kim; Hyun Woo Kim 005; Hyungjin Kim 001; Byung-Gook Park (IEICE Trans. Electron., 2013)

Highly Reliable/Manufacturable 4nm FinFET Platform Technology (SF4X) for HPC Application with Dual-CPP/HP-HD Standard Cells. - Kihwang Son; Seulki Park; Kyunghoon Jung; Jun-Gyu Kim; Younggun Ko; Keonyong Cheon; Changkeun Yoon; Jiho Kim; Jaehun Jeong; Taehun Myung; Changmin Hong; Weonwi Jang; et al. (VLSI Technology and Circuits, 2023)