Nonvolatile organic field-effect transistors fabricated on Al foil substrates. - Min Gee Kim; Soo Yong Kim; Dae-Hee Han; Byung-Eun Park (IEICE Electron. Express, 2017)

The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO2 Directly Deposited on Si(100). - Min Gee Kim; Shun'ichiro Ohmi (IEICE Trans. Electron., 2019)

Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering. - Shun'ichiro Ohmi; Min Gee Kim; Masakazu Kataoka; Masaki Hayashi; Rengie Mark D. Mailig (DRC, 2020)

Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO2 Utilizing Pt Gate Electrodes. - Min Gee Kim; Masakazu Kataoka; Rengie Mark D. Mailig; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)

The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process. - Rengie Mark D. Mailig; Min Gee Kim; Shun'ichiro Ohmi (IEICE Trans. Electron., 2020)