A Unified Statistical Analysis of Comprehensive Fluctuations of Gate-All-Around Silicon Nanosheet MOSFETs Induced by RDF, ITF, and WKF Simultaneously. - Sekhar Reddy Kola; Yiming Li 005; Chieh-Yang Chen; Min-Hui Chuang (ISQED, 2022)

Intrinsic Parameter Fluctuation and Process Variation Effect of Vertically Stacked Silicon Nanosheet Complementary Field-Effect Transistors. - Sekhar Reddy Kola; Yiming Li 005; Min-Hui Chuang (ISQED, 2023)

Application of long short-term memory modeling technique to predict process variation effects of stacked gate-all-around Si nanosheet complementary-field effect transistors. - Rajat Butola; Yiming Li 005; Sekhar Reddy Kola; Chandni Akbar; Min-Hui Chuang (Comput. Electr. Eng., 2023)