Poly-Si TFT Fabricated at 150 deg C Using ICP-CVD and Excimer Laser Annealing. - Sang-Myeon Han; Min-Cheol Lee; Moon-Young Shin; Joong-Hyun Park; Min-Koo Han (Proc. IEEE, 2005)

A New Emitter Switched Thyristor (EST) employing Trench Segmented p-base. - In-Hwan Ji; Byung-Chul Jeon; Young-Hwan Choi; Yearn-Ik Choi; Min-Koo Han (Microelectron. J., 2006)

A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor. - In-Hwan Ji; Min-Woo Ha; Young-Hwan Choi; Seung-Chul Lee; Chong-Man Yun; Min-Koo Han (Microelectron. J., 2008)