Novel Strategies for Highly Uniform and Reliable Cell Characteristics of 8th Generation 1Tb 3D-NAND Flash Memory. - Changhwan Lee; Min-Tai Yu; Sejun Park; Hoki Lee; Bio Kim; Suhwan Lim; Jaeduk Lee; Sung-Hun Lee; Mincheol Park; Sujin Ahn; Sunghoi Hur (VLSI Technology and Circuits, 2023)

Innovative Barrier Metal-Less Metal Gate Scheme Leading to Highly Reliable Cell Characteristics for 8th Generation 512Gb 3D NAND Flash Memory. - Hang-Ah Park; Sejun Park; Min-Tai Yu; Ye-Chan Kim; Cheon Ho Park; Jung Hoon Lee; Jun Eon Jin; Dawoon Jeung; Hauk Han; Tai-Soo Lim; Min-Kyu Jeong; Mincheol Park; et al. (VLSI Technology and Circuits, 2024)