Impact of within-wafer process variability on radiation response. - Zhiyuan Hu; Zhangli Liu; Hua Shao; Zhengxuan Zhang; Bingxu Ning; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. J., 2011)

The impact of total ionizing radiation on body effect. - Bingxu Ning; Zhiyuan Hu; Zhengxuan Zhang; Zhangli Liu; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. J., 2011)

Total ionizing dose effects in elementary devices for 180-nm flash technologies. - Zhiyuan Hu; Zhangli Liu; Hua Shao; Zhengxuan Zhang; Bingxu Ning; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. Reliab., 2011)

Comparison of TID response in core, input/output and high voltage transistors for flash memory. - Zhangli Liu; Zhiyuan Hu; Zhengxuan Zhang; Hua Shao; Ming Chen 007; Dawei Bi; Bingxu Ning; Shichang Zou (Microelectron. Reliab., 2011)

Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology. - Bingxu Ning; Zhengxuan Zhang; Zhangli Liu; Zhiyuan Hu; Ming Chen 007; Dawei Bi; Shichang Zou (Microelectron. Reliab., 2012)

Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs. - Bingxu Ning; Dawei Bi; Huixiang Huang; Zhengxuan Zhang; Ming Chen 007; Shichang Zou (Microelectron. J., 2013)

Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs. - Bingxu Ning; Dawei Bi; Huixiang Huang; Zhengxuan Zhang; Zhiyuan Hu; Ming Chen 007; Shichang Zou (Microelectron. Reliab., 2013)