Control system design and analysis of FRP pipe thread-grinding machine. - Jiazhong Xu; Ming Qiao; Xinying Wang (Int. J. Comput. Appl. Technol., 2010)

ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications. - Lingli Jiang; Hang Fan; Ming Qiao; Bo Zhang 027; Zhaoji Li (Microelectron. Reliab., 2013)

A review of HVI technology. - Ming Qiao; Xin Zhang; Shuai Wen; Bo Zhang 027; Zhaoji Li (Microelectron. Reliab., 2014)

Effect of field implantation on off- and on-state characteristics for thin layer SOI field P-channel LDMOS. - Xin Zhou; Ming Qiao; Yang Li; Zhaoji Li; Bo Zhang 027 (ASICON, 2015)

Geographical Situation Monitoring Applications Based on MiniSAR. - Xuejing Shi; Gang Huang; Ming Qiao; Bingnan Wang (GRMSE (1), 2016)

Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer. - Zhengkang Wang; Ming Qiao; Zhaoji Li; Bo Zhang 027 (Microelectron. J., 2021)

Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process Technology. - Langtao Chen; Xin Zhou; Ying Wang; Ying Kong; Rubin Xie; Ling Peng; Yantu Mo; Ming Qiao; Bo Zhang 027 (APCCAS, 2022)

Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region. - Dong Fang; Guang Yang; Ming Qiao; Kui Xiao; Xiangyu Yang; Zheng Bian; Bo Zhang (Microelectron. J., 2022)

A low gate charge field-plate trench MOSFET with hollow split gate structure. - Ming Qiao; Tao Ma; Shida Dong; Zhengkang Wang; Shuhao Zhang; Zhaoji Li; Bo Zhang (Microelectron. J., 2022)

A physics-based compact model of shield gate trench MOSFET. - Yixun Jiang; Ming Qiao; Yin Guo; Zuquan Zheng; Lijun Shen; Xinxin Liu; Sen Zhang; Zhaoji Li; Bo Zhang 027 (Microelectron. J., 2023)

An ultralow specific on-resistance bidirectional trench power MOSFET with RESURF stepped oxide. - Dong Fang; Wenliang Liu; Ming Qiao; Xingrui Long; Zhao Qi; Bo Zhang 027 (Microelectron. J., 2023)

A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor. - Yixun Jiang; Qingfeng Kong; Ming Qiao; Yin Guo; Yuxi Tang; Xinxin Liu; Sen Zhang; Bo Zhang 027 (Microelectron. J., 2024)

Development of a 65V low Ron,sp N-type LDMOS on 180 nm BCD platform. - Qi Ding; Ning Ning 002; Jun Huang; Renxiong Li; Yu Wang; Yutuo Guo; Kunqin He; Yaxin Liu; Ziyi Zeng; Huaishan Wang; Juan Tang; Qiuyue Huo; et al. (Microelectron. J., 2025)

Research on radiation hardening of oscillator circuits based on LDMOS devices. - Xiaohui Li; Ming Qiao; Jitao Li; Zhaoji Li; Qiang Wang; Hongjun Wang; Bo Zhang 027 (Microelectron. J., 2025)