Novel Back Gate Doping Ultra Low Retention Power 22nm FDSOl SRAM for IOT Application. - Mingcheng Chang; Nigel Chan; Vivek Joshi; Sandra Hecker; Udo Ziller; Petra Poth; Alban Zaka; Tom Herrmann; Seunghwan Seo; Hongsik Yoon; Xin Zou; Zhen Xu; et al. (ESSDERC, 2018)

22FDX® Device Optimization for mmW PA. - Mingcheng Chang; Zaid Al-Husseini; Shafi Syed; Wafa Arfaoui; Tianbing Chen; Andreas Knorr (ESSDERC, 2023)