The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures. - Lingfeng Mao 001; Changhua Tan; Mingzhen Xu (Microelectron. Reliab., 2001)

Effect of SiO2/Si interface roughness on gate current. - Lingfeng Mao 001; Yao Yang; Jian-Lin Wei; Heqiu Zhang; Mingzhen Xu; Changhua Tan (Microelectron. Reliab., 2001)

Proportional difference estimate method of determining characteristic parameters of normal and log-normal distributions. - Fuchen Mu; Changhua Tan; Mingzhen Xu (Microelectron. Reliab., 2001)

A new lifetime prediction method for hot-carrier degradation in n-MOSFETs with ultrathin gate oxides under Vg=Vd. - Fuchen Mu; Mingzhen Xu; Changhua Tan; Xiaorong Duan (Microelectron. Reliab., 2001)

Erratum to "The effect of image potential on electron transmission and electric current in the direct tunneling regime of ultra-thin MOS structures" [Microelectronics Reliability 2001;41: 927-931]. - Lingfeng Mao 001; Changhua Tan; Mingzhen Xu (Microelectron. Reliab., 2002)

The effect of transition region on the direct tunneling current and Fowler-Nordheim tunneling current oscillations in ultrathin MOS structures. - Lingfeng Mao 001; Heqiu Zhang; Changhua Tan; Mingzhen Xu (Microelectron. Reliab., 2002)

Weibull characteristics of n-MOSFET's with ultrathin gate oxides under FN stress and lifetime prediction. - Fuchen Mu; Mingzhen Xu; Changhua Tan; Xiaorong Duan (Microelectron. Reliab., 2002)

Effect of reverse substrate bias on ultra-thin gate oxide n-MOSFET degradation under different stress modes. - Yao Zhao; Mingzhen Xu; Changhua Tan (Microelectron. Reliab., 2006)