The characteristics of fluorinated gate dielectric AlGaN/GaN MIS-HEMT. - Minhan Mi; Yunlong He; Bin Hou; Meng Zhang; Zuo-Chen Shi; Xiaohua Ma 001; Peixian Li; Yue Hao 001 (IEICE Electron. Express, 2015)

A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications. - Pengfei Wang; Minhan Mi; Sirui An; Xiang Du; Xiaohua Ma 001; Yue Hao 001 (ICTA, 2022)

Improved transport properties and mechanism in recessed-gate InAlN/GaN HEMTs using a self-limited surface restoration method. - Siyu Liu; Xiaohua Ma 001; Jiejie Zhu; Minhan Mi; Jingshu Guo; Jielong Liu; Yilin Chen; Qing Zhu; Ling Yang 003; Yue Hao 001 (Sci. China Inf. Sci., 2022)

Millimeter-Wave AlGaN/GaN MIS-HEMTs with Multiple T-Gate Technology. - Jielong Liu; Chang Wu; Tao Guo; Kai Wang; Chengcheng Li; An Liu; Rui Zhou; Zhen Huang; Jiayan Wu; Minhan Mi; Xiaohua Ma 001 (ICTA, 2023)

Degradation induced by holes in Si3N4/AlGaN/GaN MIS HEMTs under off-state stress with UV light. - Yilin Chen; Qing Zhu; Jiejie Zhu; Minhan Mi; Meng Zhang; Yuwei Zhou; Ziyue Zhao; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2023)

A novel multi-threshold coupling InAlN/GaN double-channel HEMT for improving transconductance flatness. - Sirui An; Minhan Mi; Pengfei Wang; Sijia Liu; Qing Zhu; Meng Zhang; Zhihong Chen; Jielong Liu; Siyin Guo; Can Gong; Xiaohua Ma 001; Yue Hao 001 (Sci. China Inf. Sci., 2024)

High linearity GaN HEMT by optimized three-dimensional-gated modulation via top-MIS-gate nanowire channel structure. - Can Gong; Minhan Mi; Yuwei Zhou; Pengfei Wang; Hanzhen Li; Xinyi Wen; Ting Meng; Sirui An; Xiang Du; Kai Cheng; Meng Zhang; Qing Zhu; et al. (Sci. China Inf. Sci., 2025)