Systematical study of 14nm FinFET reliability: From device level stress to product HTOL. - Changze Liu; Hyun-Chul Sagong; Hyejin Kim; Seungjin Choo; Hyunwoo Lee; Yoohwan Kim; Hyunjin Kim; Bisung Jo; Minjung Jin; Jinjoo Kim; Sangsu Ha; Sangwoo Pae; et al. (IRPS, 2015)

A systematic study of gate dielectric TDDB in FinFET technology. - Hyunjin Kim; Minjung Jin; Hyun-Chul Sagong; Jinju Kim; Ukjin Jung; Minhyuck Choi; Junekyun Park; Sangchul Shin; Sangwoo Pae (IRPS, 2018)

Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack. - Minjung Jin; Kangjung Kim; Yoohwan Kim; Hyewon Shim; Jinju Kim; Gunrae Kim; Sangwoo Pae (Microelectron. Reliab., 2018)

Impact of Barrier Metal Thickness on SRAM Reliability. - Rakesh Ranjan; Pavitra Ramadevi Perepa; Ki-Don Lee; Hokyung Park; Peter Kim; Ganesh Chakravarthy Yerubandi; Jon Haefner; Caleb Dongkyun Kwon; Minjung Jin; Wenhao Zhou; Hyewon Shim; Shin-Young Chung (IRPS, 2023)