Thermally-activated failure mechanisms of 0.25 mu mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests. - Zhan Gao; Francesca Chiocchetta; Fabiana Rampazzo; Carlo De Santi; Mirko Fornasier; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni (IRPS, 2023)

Deep Level Effects in N-Polar AlGaN/GaN High Electron Mobility Transistors: Toward Zero Dispersion Effects. - Marco Saro; Francesco de Pieri; Andrea Carlotto; Mirko Fornasier; Fabiana Rampazzo; Carlo De Santi; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni; Davide Bisi; Matthew Guidry; Stacia Keller; et al. (IRPS, 2024)