A 1-Gb SDRAM with ground-level precharged bit line and nonboosted 2.1-V word line. - Satoshi Eto; Masato Matsumiya; Masato Takita; Yuki Ishii; Toshikazu Nakamura; Kuninori Kawabata; Hideki Kano; Ayako Kitamoto; Toshimi Ikeda; Toru Koga; Mitsuhiro Higashiho; Yuji Serizawa; et al. (IEEE J. Solid State Circuits, 1998)