A 2.2-V operation, 2.4-GHz single-chip GaAs MMIC transceiver for wireless applications. - Kazuya Yamamoto; Takao Moriwaki; Takayuki Fujii; Jun Otsuji; Miyo Miyashita; Yukio Miyazaki; Kazuo Nishitani (IEEE J. Solid State Circuits, 1999)

3.5-GHz-Band Low-Bias-Current Operation 0/20-dB Step Linearized Attenuators Using GaAs-HBT Compatible, AC-Coupled, Stack Type Base-Collector Diode Switch Topology. - Kazuya Yamamoto; Miyo Miyashita; Nobuyuki Ogawa; Takeshi Miura; Teruyuki Shimura (IEICE Trans. Electron., 2007)

A Current-Mirror-Based GaAs-HBT RF Power Detector Suitable for Base Terminal Monitoring in an HBT Power Stage. - Kazuya Yamamoto; Hitoshi Kurusu; Miyo Miyashita; Satoshi Suzuki; Hiroaki Seki (IEICE Trans. Electron., 2015)

A 3.5-GHz-Band GaAs HBT Stage-Bypass-Type Step-Gain Amplifier Using Base-Collector Diode Switches and Its Application to a WiMAX HBT MMIC Power Amplifier Module. - Kazuya Yamamoto; Miyo Miyashita; Hitoshi Kurusu; Yoshinobu Sasaki; Satoshi Suzuki; Hiroaki Seki (IEICE Trans. Electron., 2015)

0.8-/1.5-GHz-Band WCDMA HBT MMIC Power Amplifiers with an Analog Bias Control Scheme. - Kazuya Yamamoto; Takayuki Matsuzuka; Miyo Miyashita; Kenichi Maeda; Satoshi Suzuki; Hiroaki Seki (IEICE Trans. Electron., 2015)

Design and Measurements of Building Blocks Supporting a 1.9-GHz-Band BiFET MMIC Power Amplifier for WCDMA Handsets. - Kazuya Yamamoto; Takayuki Matsuzuka; Miyo Miyashita; Kenichi Horiguchi; Shigeo Yamabe; Satoshi Suzuki; Hiroaki Seki (IEICE Trans. Electron., 2016)

Experimental Study on CDMA GaAs HBT MMIC Power Amplifier Layout Design for Reducing Turn-On Delay in Transient Response. - Kazuya Yamamoto; Miyo Miyashita; Takayuki Matsuzuka; Tomoyuki Asada; Kazunobu Fujii; Satoshi Suzuki; Teruyuki Shimura; Hiroaki Seki (IEICE Trans. Electron., 2017)

Design and Measurements of Two-Gain-Mode GaAs-BiFET MMIC Power Amplifier Modules with Small Phase Discontinuity for WCDMA Data Communications. - Kazuya Yamamoto; Miyo Miyashita; Kenji Mukai; Shigeru Fujiwara; Satoshi Suzuki; Hiroaki Seki (IEICE Trans. Electron., 2018)

A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications. - Takaaki Yoshioka; Kenji Harauchi; Takumi Sugitani; Takashi Yamasaki; Hiroaki Ichinohe; Miyo Miyashita; Kazuya Yamamoto; Seiki Goto (BCICTS, 2020)

Ku-Band 70-/30-W-Class Internally Matched GaN Power Amplifiers With Low IMD3 Over a Wide Offset Frequency Range of Up To 400 MHz. - Takaaki Yoshioka; Kenji Harauchi; Takumi Sugitani; Hiroaki Maehara; Takashi Yamasaki; Hiroaki Ichinohe; Miyo Miyashita; Kazuya Yamamoto; Seiki Goto (IEEE J. Solid State Circuits, 2021)