Reliability study of Power RF LDMOS for Radar Application. - Hichame Maanane; Pierre Bertram; Jérôme Marcon; Mohamed Masmoudi; Mohamed Ali Belaïd; Karine Mourgues; Philippe Eudeline; K. Ketata (Microelectron. Reliab., 2004)

Comparative analysis of accelerated ageing effects on power RF LDMOS reliability. - Mohamed Ali Belaïd; K. Ketata; Karine Mourgues; Hichame Maanane; Mohamed Masmoudi; Jérôme Marcon (Microelectron. Reliab., 2005)

Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance. - M. Gares; Hichame Maanane; Mohamed Ali Belaïd; Mohamed Masmoudi; Jérôme Marcon; Karine Mourgues; Pierre Bertram; Philippe Eudeline (CCECE, 2006)

Electrical parameters degradation of power RF LDMOS device after accelerated ageing tests. - Mohamed Ali Belaïd; K. Ketata; Mohamed Masmoudi; M. Gares; Hichame Maanane; Jérôme Marcon (Microelectron. Reliab., 2006)

Hot carrier reliability of RF N- LDMOS for S Band radar application. - M. Gares; Hichame Maanane; Mohamed Masmoudi; Pierre Bertram; Jérôme Marcon; Mohamed Ali Belaïd; Karine Mourgues; C. Tolant; Philippe Eudeline (Microelectron. Reliab., 2006)

Study of RF N- LDMOS critical electrical parameter drifts after a thermal and electrical ageing in pulsed RF. - Hichame Maanane; Mohamed Masmoudi; Jérôme Marcon; Mohamed Ali Belaïd; Karine Mourgues; C. Tolant; K. Ketata; Philippe Eudeline (Microelectron. Reliab., 2006)

Reliability study of power RF LDMOS device under thermal stress. - Mohamed Ali Belaïd; K. Ketata; Karine Mourgues; M. Gares; Mohamed Masmoudi; Jérôme Marcon (Microelectron. J., 2007)

Comparative analysis of RF LDMOS capacitance reliability under accelerated ageing tests. - Mohamed Ali Belaïd; K. Ketata; M. Gares; Karine Mourgues; Mohamed Masmoudi; Jérôme Marcon (Microelectron. Reliab., 2007)

Study of hot-carrier effects on power RF LDMOS device reliability. - M. Gares; Mohamed Ali Belaïd; Hichame Maanane; Mohamed Masmoudi; Jérôme Marcon; Karine Mourgues; Philippe Eudeline (Microelectron. Reliab., 2007)

Evaluation of hot-electron effects on critical parameter drifts in power RF LDMOS transistors. - Mohamed Ali Belaïd; K. Daoud (Microelectron. Reliab., 2010)

S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Philippe Eudeline (Microelectron. Reliab., 2011)

Failure analysis of hot-electron effect on power RF N-LDMOS transistors. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Philippe Eudeline (DTIS, 2012)

Conducted and radiated EMI evolution of power RF N-LDMOS after accelerated ageing tests. - Mohamed Tlig; Jaleleddine Ben Hadj Slama; Mohamed Ali Belaïd (Microelectron. Reliab., 2013)

Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests. - Mohamed Ali Belaïd; Ahmed M. Nahhas; M. Gares; K. Daoud; Olivier Latry (Microelectron. J., 2014)

Performance drifts of N-MOSFETs under pulsed RF life test. - Mohamed Ali Belaïd; M. Gares; K. Daoud; Olivier Latry (Microelectron. Reliab., 2014)

Impact of hot carrier injection on switching time evolution for power RF LDMOS after accelerated tests. - Mohamed Ali Belaïd (Microelectron. Reliab., 2015)

Evolution study of the ElectroMagnetic Interference for RF LDMOS in series chopper application after thermal accelerated tests. - Mohamed Ali Belaïd; H. Kaouach; Jaleleddine Ben Hadj Slama (Microelectron. Reliab., 2016)

Symptom reliability: S-parameters evaluation of power laterally diffused-metal-oxide-semiconductor field-effect transistor after pulsed-RF life tests for a radar application. - Mohamed Ali Belaïd (IET Circuits Devices Syst., 2018)

Performance analysis of S-parameter in N-MOSFET devices after thermal accelerated tests. - Mohamed Ali Belaïd (Microelectron. Reliab., 2018)

RF performance reliability of power N-LDMOS under pulsed-RF aging life test in radar application S-band. - Mohamed Ali Belaïd; Ahmed Almusallam; Mohamed Masmoudi (IET Circuits Devices Syst., 2020)

A Comprehensive Approach to Flexible LVRT Strategies for Inverter-Based PPMs Enhancing Voltage-Support, Overcurrent Protection, and DC-Link Voltage Quality. - Fathia Letaief; Mahmoud Hamouda; Mohamed Ali Belaïd; Kamal Al-Haddad (IEEE Access, 2024)