Two-dimensional analytical threshold voltage model for nanoscale graded channel gate stack DG MOSFETs. - Mohamed Amir Abdi; Fayçal Djeffal; Mohammed Meguellati; Djemai Arar (ICECS, 2009)

A two-dimensional semi-analytical analysis of the subthreshold-swing behavior including free carriers and interfacial traps effects for nanoscale double-gate MOSFETs. - Fayçal Djeffal; Toufik Bendib; Mohamed Amir Abdi (Microelectron. J., 2011)

Drain current model for undoped Gate Stack Double Gate (GSDG) MOSFETs including the hot-carrier degradation effects. - Fayçal Djeffal; Toufik Bentrcia; Mohamed Amir Abdi; Toufik Bendib (Microelectron. Reliab., 2011)

Numerical Study of All 2D Materials Perovskite Solar Cell Using Scaps 1D Simulation. - Souad Belferdi; Mohamed Amir Abdi; Hichem Bencherif; Okba Mohammed Cherif; P. Sasikumar; Sabrina Mokrani; Qoteyba Aouni; Ziyad Younsi (ICSC, 2024)