Leakage Current Variability in Nanometer Technologies, invited. - Mohab Anis; Mohamed H. Abu-Rahma (IWSOC, 2005)

Variability in VLSI Circuits: Sources and Design Considerations. - Mohamed H. Abu-Rahma; Mohab Anis (ISCAS, 2007)

A methodology for statistical estimation of read access yield in SRAMs. - Mohamed H. Abu-Rahma; Kinshuk Chowdhury; Joseph Wang; Zhiqin Chen; Sei Seung Yoon; Mohab Anis (DAC, 2008)

A robust single supply voltage SRAM read assist technique using selective precharge. - Mohamed H. Abu-Rahma; Mohab Anis; Sei Seung Yoon (ESSCIRC, 2008)

A Statistical Design-Oriented Delay Variation Model Accounting for Within-Die Variations. - Mohamed H. Abu-Rahma; Mohab Anis (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2008)

Reducing SRAM Power Using Fine-Grained Wordline Pulsewidth Control. - Mohamed H. Abu-Rahma; Mohab Anis; Sei Seung Yoon (IEEE Trans. Very Large Scale Integr. Syst., 2010)

Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS. - Mohamed H. Abu-Rahma; Ying Chen; Wing Sy; Wee Ling Ong; Leon Yeow Ting; Sei Seung Yoon; Michael Han 002; Esin Terzioglu (CICC, 2011)

Leakage power profiling and leakage power reduction using DFT hardware. - Rajamani Sethuram; Karim Arabi; Mohamed H. Abu-Rahma (VTS, 2011)

Analysis, modeling and silicon correlation of low-voltage flop data retention in 28nm process technology. - Animesh Datta; Mohamed H. Abu-Rahma; Sachin Dileep Dasnurkar; Hadi Rasouli; Sean Tamjidi; Ming Cai; Samit Sengupta; P. R. Chidambaram; Raghavan Thirumala; Nikhil Kulkarni; Prasanna Seeram; Prasad Bhadri; et al. (ISQED, 2013)

Experiments and analysis to characterize logic state retention limitations in 28nm process node. - Sachin Dileep Dasnurkar; Animesh Datta; Mohamed H. Abu-Rahma; Hieu Nguyen; Martin Villafana; Hadi Rasouli; Sean Tamjidi; Ming Cai; Samit Sengupta; P. R. Chidambaram; Raghavan Thirumala; Nikhil Kulkarni; et al. (VTS, 2013)