A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology. - Mohamed Hussein Eissa; Ahmed Awny; Georg Winzer; Marcel Kroh; Stefan Lischke; Dieter Knoll; Lars Zimmermann; Dietmar Kissinger; Ahmet Cagri Ulusoy (ESSCIRC, 2016)

A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. - Farabi Ibne Jamal; Mohamed Hussein Eissa; Johannes Borngräber; Herman Jalli Ng; Dietmar Kissinger; Jan Wessel (RWS, 2017)

A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy. - Rahul Kumar Yadav; Jan Wessel; Mohamed Hussein Eissa; Farabi Ibne Jamal; Maciej Kucharski; Dietmar Kissinger (ISCAS, 2018)

Implementation of a Multi-Core Data Link Layer Processor for THz Communication. - Lukasz Lopacinski; Mohamed Hussein Eissa; Goran Panic; Marcin Brzozowski; Alireza Hasani; Rolf Kraemer (VTC Spring, 2018)

Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate. - Mohamed Hussein Eissa; Andrea Malignaggi; Ruoyu Wang 009; Mohamed Elkhouly; Klaus Schmalz; Ahmet Cagri Ulusoy; Dietmar Kissinger (IEEE J. Solid State Circuits, 2018)

D-Band Frequency Quadruplers in BiCMOS Technology. - Maciej Kucharski; Mohamed Hussein Eissa; Andrea Malignaggi; Defu Wang; Herman Jalli Ng; Dietmar Kissinger (IEEE J. Solid State Circuits, 2018)

Modular Data Link Layer Processing for THz communication. - Lukasz Lopacinski; Mohamed Hussein Eissa; Goran Panic; Alireza Hasani; Rolf Kraemer (DDECS, 2019)

A 13.5dBm Fully Integrated 200-to-255GHz Power Amplifier with a 4-Way Power Combiner in SiGe: C BiCMOS. - Mohamed Hussein Eissa; Dietmar Kissinger (ISSCC, 2019)

Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology. - Lukasz Lopacinski; Miroslav Marinkovic; Goran Panic; Mohamed Hussein Eissa; Alireza Hasani; Karthik KrishneGowda; Rolf Kraemer (IEEE Access, 2019)

Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS. - Aniello Franzese; Mohamed Hussein Eissa; Thomas Mausolf; Dietmar Kissinger; Renato Negra; Andrea Malignaggi (BCICTS, 2020)

A V-band Bidirectional Amplifier-Module for Hybrid Phased-Array Systems in BiCMOS Technology. - Ahmed Gadallah; Mohamed Hussein Eissa; Dietmar Kissinger; Andrea Malignaggi (RWS, 2020)

A Broadband 110-170 GHz Frequency Multiplier by 4 Chain with 8 dBm Output Power in 130 nm BiCMOS. - Alper Karakuzulu; Mohamed Hussein Eissa; Dietmar Kissinger; Andrea Malignaggi (ESSCIRC, 2021)

Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications. - Aniello Franzese; Mohamed Hussein Eissa; Dietmar Kissinger; Andrea Malignaggi (RWS, 2021)

OFDM Transmission over a Short-Range 240 GHz Wireless Link: Performance Analysis. - Nebojsa Maletic; Mohamed Hussein Eissa; Lukasz Lopacinski; Vladica Sark; Jesús Gutiérrez 004; Eckhard Grass (WSA, 2021)

Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz. - Klaus Schmalz; Nick Rothbart; Alexandra Glück; Mohamed Hussein Eissa; Thomas Mausolf; Esref Turkmen; Selahattin Berk Yilmaz; Heinz-Wilhelm Hübers (IEEE Access, 2021)

Low-complexity subspace method for I/Q imbalance estimation in low-IF receivers with unknown fading. - Ahmad Gomaa; Ayman Elezabi; Mohamed Hussein Eissa (Trans. Emerg. Telecommun. Technol., 2021)

A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors. - Batuhan Sutbas; Mohamed Hussein Eissa; Gerhard Kahmen (BCICTS, 2023)

Vector Modulator Based Leakage Cancellation Technique for CW Radar Transceiver Frontends. - Batuhan Sutbas; Mohamed Hussein Eissa; Gerhard Kahmen (RWS, 2023)