Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure. - Clemens Ostermaier; Peter Lagger; Mohammed Alomari; Patrick Herfurth; David Maier 002; Alexander Alexewicz; Marie-Antoinette di Forte-Poisson; Sylvain L. Delage; Gottfried Strasser; Dionyz Pogany; Erhard Kohn (Microelectron. Reliab., 2012)

600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. - Muhammad Alshahed; Mohammed Alomari; Christine Harendt; Joachim N. Burghartz; C. Wachter; T. Bergunde; S. Lutgen (ESSDERC, 2016)

Comprehensive compact electro-thermal GaN HEMT model. - Muhammad Alshahed; M. Dakran; Lars Heuken; Mohammed Alomari; Joachim N. Burghartz (ESSDERC, 2017)

Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates. - Lars Heuken; Muhammad Alshahed; Alessandro Ottaviani; Mohammed Alomari; Joachim N. Burghartz; Ulrike Waizmann; Thomas Reindl (ESSDERC, 2018)

Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure. - Mamta Pradhan; Matthias Moser; Mohammed Alomari; Joachim N. Burghartz; Ingmar Kallfass (ESSDERC, 2022)