Capacitance and Surface Potential Model for III-V Double-Gate FET. - Sarath Chandran G. M; Mohit D. Ganeriwala; Nihar Ranjan Mohapatra (ISDCS, 2019)

An Unified Charge Centroid Model for Silicon and Low Effective Mass III-V Channel Double Gate MOS Transistors. - Amratansh Gupta; Mohit Ganeriwala; Nihar Ranjan Mohapatra (VLSID, 2019)