A 260mV L-shaped 7T SRAM with bit-line (BL) Swing expansion schemes based on boosted BL, asymmetric-VTH read-port, and offset cell VDD biasing techniques. - Ming-Pin Chen; Lai-Fu Chen; Meng-Fan Chang; Shu-Meng Yang; Yao-Jen Kuo; Jui-Jen Wu; Mon-Shu Ho; Hsiu-Yun Su; Yuan-Hua Chu; Wen-Chin Wu; Tzu-Yi Yang; Hiroyuki Yamauchi (VLSIC, 2012)

A low-power subthreshold-to-superthreshold level-shifter for sub-0.5V embedded resistive RAM (ReRAM) macro in ultra low-voltage chips. - Meng-Fan Chang; Che-Wei Wu; Jui-Yu Hung; Ya-Chin King; Chomg-Jung Lin; Mon-Shu Ho; Chia-Cheng Kuo; Shyh-Shyuan Sheu (APCCAS, 2014)

Read circuits for resistive memory (ReRAM) and memristor-based nonvolatile Logics. - Meng-Fan Chang; Albert Lee; Chien-Chen Lin; Mon-Shu Ho; Ping-Cheng Chen; Chia-Chen Kuo; Ming-Pin Chen; Pei-Ling Tseng; Tzu-Kun Ku; Chien-Fu Chen; Kai-Shin Li; Jia-Min Shieh (ASP-DAC, 2015)

RRAM-based 7T1R nonvolatile SRAM with 2x reduction in store energy and 94x reduction in restore energy for frequent-off instant-on applications. - Albert Lee; Meng-Fan Chang; Chien-Chen Lin; Chien-Fu Chen; Mon-Shu Ho; Chia-Chen Kuo; Pei-Ling Tseng; Shyh-Shyuan Sheu; Tzu-Kun Ku (VLSIC, 2015)

Challenges of emerging memory and memristor based circuits: Nonvolatile logics, IoT security, deep learning and neuromorphic computing. - Chunmeng Dou; Wei-Hao Chen; Yi-Ju Chen; Huan-Ting Lin; Wei-Yu Lin; Mon-Shu Ho; Meng-Fan Chang (ASICON, 2017)

A 2-GHz Direct Digital Frequency Synthesizer Based on LUT and Rotation. - Yixiong Yang; Zhibo Wang 004; Pei Yang; Meng-Fan Chang; Mon-Shu Ho; Huazhong Yang; Yongpan Liu (ISCAS, 2018)

Considerations Of Integrating Computing-In-Memory And Processing-In-Sensor Into Convolutional Neural Network Accelerators For Low-Power Edge Devices. - Kea-Tiong Tang; Wei-Chen Wei; Zuo-Wei Yeh; Tzu-Hsiang Hsu; Yen-Cheng Chiu; Cheng-Xin Xue; Yu-Chun Kuo; Tai-Hsing Wen; Mon-Shu Ho; Chung-Chuan Lo; Ren-Shuo Liu; Chih-Cheng Hsieh; et al. (VLSI Circuits, 2019)

A 28nm Nonvolatile AI Edge Processor using 4Mb Analog-Based Near-Memory-Compute ReRAM with 27.2 TOPS/W for Tiny AI Edge Devices. - Tai-Hao Wen; Je-Min Hung; Hung-Hsi Hsu; Yuan Wu 009; Fu-Chun Chang; Chung-Yuan Li; Chih-Han Chien; Chin-I Su; Win-San Khwa; Jui-Jen Wu; Chung-Chuan Lo; Ren-Shuo Liu; et al. (VLSI Technology and Circuits, 2023)