Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers. - Andrea Padovani; Milan Pesic; Mondol Anik Kumar; Pieter Blomme; Alexandre Subirats; Senthil Vadakupudhupalayam; Zunaid Baten; Luca Larcher (IRPS, 2019)

Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited). - Andrea Padovani; Milan Pesic; Federico Nardi; Valerio Milo; Luca Larcher; Mondol Anik Kumar; Zunaid Baten (IRPS, 2022)

Towards Improving Ionizing Radiation Tolerance of 3-D NAND Flash Memory. - Biswajit Ray; Matchima Buddhanoy; Mondol Anik Kumar (IMW, 2023)

Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development. - Bastien Beltrando; Marco A. Villena; Mondol Anik Kumar; Shruba Gangopadhyay; Deepak Kamalanathan; E. Smith; Nasrin Kazem; Ghazal Saheli; Stephen Weeks; Michael Haverty; Muthukumar Kaliappan; Andrea Padovani; et al. (IMW, 2024)

Cross-Temperature Reliability of 3D NAND: Cell-to-Cell Variability Analysis and Countermeasure. - Mondol Anik Kumar; Biswajit Ray (IRPS, 2024)