A 4 Megabit Carbon Nanotube-based nonvolatile memory (NRAM). - Glen Rosendale; Sohrab Kianian; Monte Manning; Darlene Hamilton; Henry Huang; Karl Robinson; Young Weon Kim; Thomas Rueckes (ESSCIRC, 2010)

Reset-Check-Reverse-Flag Scheme on NRAM With 50% Bit Error Rate or 35% Parity Overhead and 16% Decoding Latency Reductions for Read-Intensive Storage Class Memory. - Sheyang Ning; Tomoko Ogura Iwasaki; Shuhei Tanakamaru; Darlene Viviani; Henry Huang; Monte Manning; Thomas Rueckes; Ken Takeuchi (IEEE J. Solid State Circuits, 2016)