Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration. - Moritz Brehm; T. Suzuki; Zhenyang Zhong; Thomas Fromherz; Julian Stangl; G. Hesser; Stefan Birner; Friedrich Schäffler; Günther Bauer (Microelectron. J., 2008)

Data publication: Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment. - Christoph Wilflingseder; Johannes Aberl; Enrique Prado Navarrete; Guenter Hesser; Heiko Groiss; Maciej Oskar Liedke; Maik Butterling; Andreas Wagner; Eric Hirschmann; Cedric Corley-Wiciak; Marvin Zoellner; Giovanni Capellini; et al. (RODARE, 2024)

Electrostatically Adaptable Current Mirror based on Germanium Field-Effect Transistors. - Andreas Fuchsberger; Alexandra Dobler; Lukas Wind; Andreas Kramer; Julian Kulenkampff; Maximilian Reuter; Daniele Nazzari; Giulio Galderisi; Enrique Prado Navarrete; Johannes Aberl; Moritz Brehm; Jens Trommer; et al. (ISCAS, 2025)