The Influence of the Stacked and Double Material Gate Structures on the Short Channel Effects in SOI MOSFETS. - Ehsanollah Fathi; Ashkan Behnam; Pouya Hashemi; Behzad Esfandyarpour; Morteza Fathipour (IEICE Trans. Electron., 2005)

Employing work function enginnering and asymmetric gate oxide in nano-scale source-heterojunction-MOS-transistor. - Mahsa Tahermaram; Mahdi Vadizadeh; A. Eslamzadeh; Morteza Fathipour (EIT, 2009)

A backstepping controller for piezoelectric actuators with hysteresis in nanopositioning. - Amir Farrokh Payam; Morteza Fathipour; Mohammad Javad Yazdanpanah (NEMS, 2009)

Design of a feedforward controller for AFM nanopositioning based on neural network control theory. - Amir Farrokh Payam; Mohammad Javad Yazdanpanah; Morteza Fathipour (NEMS, 2009)

Design of an ultra-low power 32-bit adder operating at subthreshold voltages in 45-nm FinFET. - Mohsen Jafari; Mohsen Imani; Mohammad Ansari; Morteza Fathipour; Nader Sehatbakhsh (DTIS, 2013)

Bottom-up design of a high performance ultra-low power DFT utilizing multiple-VDD, multiple-Vth and gate sizing. - Mohsen Jafari; Mohsen Imani; Morteza Fathipour; Nader Sehatbakhsh (DTIS, 2013)