General features of progressive breakdown in gate oxides: A compact model. - Felix Palumbo; Moshe Eizenberg; Salvatore Lombardo (IRPS, 2015)

Influence of gate oxides with high thermal conductivity on the failure distribution of InGaAs-based MOS stacks. - Felix Palumbo; Salvatore Lombardo; Moshe Eizenberg (Microelectron. Reliab., 2016)

Impact of forming gas annealing on the degradation dynamics of Ge-based MOS stacks. - Fernando L. Aguirre; Sebastián Matías Pazos; Felix Palumbo; Sivan Fadida; Roy Winter; Moshe Eizenberg (IRPS, 2018)