Simulation Study of Trench IGBT with Diode-Clamped P-Well for High dI/dt and dV/dt Controllability. - Rongxin Chen; Bo Yi; MouFu Kong; Xingbi Chen (ASICON, 2019)

A Low On-state Voltage and Large Current Capability Thin SOI-LIGBT with Trench NMOS. - Jun Huang; MouFu Kong; Xingbi Chen (ASICON, 2019)

Simulation Study on Novel High Voltage Transient Voltage Suppression Diodes. - Cong Liu; MouFu Kong; Hanzhi Chen; Bo Yi; Bingke Zhang; Xingbi Chen (ASICON, 2019)

SiC trench MOSFET with integrated side-wall Schottky barrier diode having P+ electric field shield. - Bo Yi; Hao Hu; Jia Lin; Junji Cheng; Haimeng Huang; MouFu Kong (IEICE Electron. Express, 2019)

Simulation study of an ultra-low specific on-resistance high-voltage pLDMOS with self-biased accumulation layer. - Bo Yi; Yi Feng Peng; Qing Zhao; MouFu Kong; Junji Cheng; Haimeng Huang (IEICE Electron. Express, 2020)

A New Ga2O3 Trench Schottky Barrier Diode with Improved Forward Conduction Characteristics. - Moufu Kong; Zewei Hu; Jiacheng Gao; Zongqi Chen; Jiaxin Guo; Sadaf Ali Nafees; Bo Yi; Hongqiang Yang (ASICON, 2021)

A Novel Trench MOSFET with p-Pillar and RSO Accumulation Layer for Improved Performance. - Moufu Kong; Ke Huang; Bin Wang; Cong Liu; Bo Yi; Hongqiang Yang (ASICON, 2021)

A split-gate SiC trench MOSFET with embedded unipolar diode for improved performances. - Zheng Wu; Chao Xia; Bo Yi; Junji Cheng; Haimeng Huang; Moufu Kong; Hongqiang Yang; Wenkun Shi (ASICON, 2021)

A Vertical Thin Layer pLDMOS with Linear doping realizing ultralow Ron, sp. - Bo Yi; Zheng Wu; Junji Cheng; Haimeng Huang; Moufu Kong; Hongqiang Yang (ASICON, 2021)

A Novel Semi-superjunction SiC Trench MOSFET with Ultra-low Specific On-resistance. - Zhaoyu Ai; Haiyun Liu; Xinyang Chen; Jing Feng; Yuxi Zhou; Moufu Kong (ASICON, 2023)

An Ultra-low Specific On-resistance SiC LDMOS Using Double RESURF and Field Plate Techniques. - Moufu Kong; Zeyu Cheng; Ning Yu; Rui Jin; Jiaxin Guo; Hongqiang Yang (ASICON, 2023)

A Novel SiC Superjunction Trench MOSFET with Integrated Heterojunction Diode for Improved Performance. - Moufu Kong; Ke Huang; Ronghe Yan; Bo Yi; Bingke Zhang; Hongqiang Yang (ASICON, 2023)

A Novel 1200-V Class SiC MOSFET With Schottky Barrier Diode for Improved third quadrant performance. - Moufu Kong; Zhi Lin 002; Hongfei Deng; Bo Yi; Rui Jin; Hongqiang Yang (ASICON, 2023)

Comprehensive Comparison of Temperature Performances for SiC Trench MOSFET with Integrated Side-wall Schottky Diode and Heterojunction. - Bo Yi; Haimeng Huang; Haoran Hu; MouFu Kong; Yilin Guo; Wenkun Shi; Junji Cheng; Hongqiang Yang (ASICON, 2023)

Modeling and simulation of an insulated-gate HEMT using p-SnO2 gate for high VTH design. - Bo Yi; Yi Xu; LiTian Zheng; Junji Cheng; Haimeng Huang; MouFu Kong; Hongqiang Yang (Microelectron. J., 2023)

Investigations of SiC lateral MOSFET with high-k and equivalent variable lateral doping techniques. - Moufu Kong; Hongfei Deng; Yingzhi Luo; Jiayan Zhu; Bo Yi; Hongqiang Yang; Qiang Hu; Fanxin Meng (Microelectron. J., 2024)

A new concept high-k GaN FinFET with integrated SBD breaking the unipolar limit of GaN and realizing excellent reverse recovery performance. - Moufu Kong; Qizhi Feng; Hongfei Deng; Zhaoyu Ai; Mingliang Yang; Ning Yu; Bingke Zhang; Bo Yi; Hongqiang Yang (Microelectron. J., 2025)

High-voltage GaN HEMT with self-biased P-GaN VLD layer for improved breakdown voltage and figure of merit. - Moufu Kong; Ning Yu; Yaowen Zhang; Zeyu Cheng; Bingke Zhang; Bo Yi; Hongqiang Yang (Microelectron. J., 2025)