Impact of Si/Al implantation on the forming voltage and pre-forming conduction modes in HfO2 based OxRAM cells. - M. Barlas; Boubacar Traore; Laurent Grenouillet; Stefania Bernasconi; Philippe Blaise; Mouhamad Alayan; Benoit Sklénard; Eric Jalaguier; Philippe Rodriguez; F. Mazen; E. Vilain; M. Guillermet; et al. (ESSDERC, 2016)

Correlated Effects on Forming and Retention of Al Doping in HfO2-Based RRAM. - Mouhamad Alayan; Elisa Vianello; Barbara De Salvo; Luca Perniola; Andrea Padovani; Luca Larcher (IEEE Des. Test, 2017)

Switching Event Detection and Self-Termination Programming Circuit for Energy Efficient ReRAM Memory Arrays. - Mouhamad Alayan; Eloi Muhr; Alexandre Levisse; Marc Bocquet; Mathieu Moreau; Etienne Nowak; Gabriel Molas; Elisa Vianello; Jean-Michel Portal (IEEE Trans. Circuits Syst. II Express Briefs, 2019)

Write Termination Circuits for RRAM: A Holistic Approach From Technology to Application Considerations. - Alexandre Levisse; Marc Bocquet; Marco Rios; Mouhamad Alayan; Mathieu Moreau; Etienne Nowak; Gabriel Molas; Elisa Vianello; David Atienza; Jean-Michel Portal (IEEE Access, 2020)