Estimation of SiC JFET temperature during short-circuit operations. - Mounira Berkani; Stéphane Lefebvre; Narjes Boughrara; Zoubir Khatir; Jean-Claude Faugières; Peter Friedrichs; Ali Haddouche (Microelectron. Reliab., 2009)

Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling. - Vanessa Smet; François Forest; Jean-Jacques Huselstein; Frédéric Richardeau; Zoubir Khatir; Stéphane Lefebvre; Mounira Berkani (IEEE Trans. Ind. Electron., 2011)

Robustness of 1.2 kV SiC MOSFET devices. - D. Othman; Stéphane Lefebvre; Mounira Berkani; Zoubir Khatir; Ali Ibrahim; A. Bouzourene (Microelectron. Reliab., 2013)

Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24 V battery system applications. - Gilles Rostaing; Mounira Berkani; D. Mechouche; Denis Labrousse; Stéphane Lefebvre; Zoubir Khatir; Philippe Dupuy (Microelectron. Reliab., 2013)

3-D electrothermal simulation of active cycling on smart power MOSFETs during short-circuit and UIS conditions. - Michele Riccio; Vincenzo d'Alessandro; Andrea Irace; Gilles Rostaing; Mounira Berkani; Stéphane Lefebvre; Philippe Dupuy (Microelectron. Reliab., 2014)

In-depth investigation of metallization aging in power MOSFETs. - R. Ruffilli; Mounira Berkani; Philippe Dupuy; Stéphane Lefebvre; Y. Weber; Marc Legros (Microelectron. Reliab., 2015)

Mechanisms of power module source metal degradation during electro-thermal aging. - R. Ruffilli; Mounira Berkani; Philippe Dupuy; Stéphane Lefebvre; Y. Weber; Marc Legros (Microelectron. Reliab., 2017)