A 0.1µm 1.8V 256Mb 66MHz Synchronous Burst PRAM. - Sangbeom Kang; WooYeong Cho; Beak-Hyung Cho; Kwangjin Lee; Changsoo Lee; Hyung-Rok Oh; Byung-Gil Choi; Qi Wang; Hye-Jin Kim; Mu-Hui Park; Yu-Hwan Ro; Suyeon Kim; et al. (ISSCC, 2006)

A 90nm 1.8V 512Mb Diode-Switch PRAM with 266MB/s Read Throughput. - KwangJin Lee; Beak-Hyung Cho; Woo-Yeong Cho; Sangbeom Kang; Byung-Gil Choi; Hyung-Rok Oh; Changsoo Lee; Hye-Jin Kim; Joon-min Park; Qi Wang; Mu-Hui Park; Yu-Hwan Ro; et al. (ISSCC, 2007)

A 0.1-µm 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation. - Sangbeom Kang; Woo Yeong Cho; Beak-Hyung Cho; KwangJin Lee; Changsoo Lee; Hyung-Rok Oh; Byung-Gil Choi; Qi Wang; Hye-Jin Kim; Mu-Hui Park; Yu-Hwan Ro; Suyeon Kim; et al. (IEEE J. Solid State Circuits, 2007)

A 90 nm 1.8 V 512 Mb Diode-Switch PRAM With 266 MB/s Read Throughput. - KwangJin Lee; Beak-Hyung Cho; Woo-Yeong Cho; Sangbeom Kang; Byung-Gil Choi; Hyung-Rok Oh; Changsoo Lee; Hye-Jin Kim; Joon-min Park; Qi Wang; Mu-Hui Park; Yu-Hwan Ro; et al. (IEEE J. Solid State Circuits, 2008)

A 58nm 1.8V 1Gb PRAM with 6.4MB/s program BW. - Hoeju Chung; Byung-Hoon Jeong; ByungJun Min; Youngdon Choi; Beak-Hyung Cho; Junho Shin; Jinyoung Kim; Jung Sunwoo; Joon-min Park; Qi Wang; Yong-jun Lee; Sooho Cha; et al. (ISSCC, 2011)

A 20nm 1.8V 8Gb PRAM with 40MB/s program bandwidth. - Youngdon Choi; Ickhyun Song; Mu-Hui Park; Hoeju Chung; Sanghoan Chang; Beakhyoung Cho; Jinyoung Kim; Younghoon Oh; Dukmin Kwon; Jung Sunwoo; Junho Shin; Yoohwan Rho; et al. (ISSCC, 2012)