Thermal characterization and modeling of ultra-thin silicon chips. - Muhammad Alshahed; Zili Yu; Horst Rempp; Harald Richter 001; Christine Harendt; Joachim N. Burghartz (ESSDERC, 2014)

600 V, low-leakage AlGaN/GaN MIS-HEMT on bulk GaN substrates. - Muhammad Alshahed; Mohammed Alomari; Christine Harendt; Joachim N. Burghartz; C. Wachter; T. Bergunde; S. Lutgen (ESSDERC, 2016)

Comprehensive compact electro-thermal GaN HEMT model. - Muhammad Alshahed; M. Dakran; Lars Heuken; Mohammed Alomari; Joachim N. Burghartz (ESSDERC, 2017)

Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates. - Lars Heuken; Muhammad Alshahed; Alessandro Ottaviani; Mohammed Alomari; Joachim N. Burghartz; Ulrike Waizmann; Thomas Reindl (ESSDERC, 2018)