A new analytical model for high frequency MOSFET noise. - Simona Donati Guerrieri; Fabrizio Bonani; Giovanni Ghione; Muhammad Ashraful Alam (CICC, 2001)

Software Security in Bangladesh with .NET Framework: A Roadmap. - Muhammad Ashraful Alam (ITCC (2), 2004)

A comprehensive model of PMOS NBTI degradation. - Muhammad Ashraful Alam; S. Mahapatra (Microelectron. Reliab., 2005)

Gate dielectric breakdown in the time-scale of ESD events. - Bonnie E. Weir; Che-Choi Leung; Paul J. Silverman; Muhammad Ashraful Alam (Microelectron. Reliab., 2005)

Temporal performance degradation under NBTI: estimation and design for improved reliability of nanoscale circuits. - Bipul Chandra Paul; Kunhyuk Kang; Haldun Kufluoglu; Muhammad Ashraful Alam; Kaushik Roy 001 (DATE, 2006)

Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI. - Kunhyuk Kang; Haldun Kufluoglu; Muhammad Ashraful Alam; Kaushik Roy 001 (ICCD, 2006)

Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement. - Kunhyuk Kang; Keejong Kim; Ahmad E. Islam; Muhammad Ashraful Alam; Kaushik Roy 001 (DAC, 2007)

Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance. - Kunhyuk Kang; Sang Phill Park; Kaushik Roy 001; Muhammad Ashraful Alam (ICCAD, 2007)

Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ. - Kunhyuk Kang; Muhammad Ashraful Alam; Kaushik Roy 001 (ITC, 2007)

A comprehensive model for PMOS NBTI degradation: Recent progress. - Muhammad Ashraful Alam; Haldun Kufluoglu; Dhanoop Varghese; S. Mahapatra (Microelectron. Reliab., 2007)

Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis. - Kunhyuk Kang; Haldun Kufluoglu; Kaushik Roy 001; Muhammad Ashraful Alam (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007)

Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits. - Bipul Chandra Paul; Kunhyuk Kang; Haldun Kufluoglu; Muhammad Ashraful Alam; Kaushik Roy 001 (IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 2007)

Reliability- and process-variation aware design of integrated circuits. - Muhammad Ashraful Alam (Microelectron. Reliab., 2008)

Computing Nice Projections of Convex Polyhedra. - Muhammad Ashraful Alam; Masud Hasan (Int. J. Comput. Geom. Appl., 2011)

OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review. - Dhanoop Varghese; V. Reddy; S. Krishnan; Muhammad Ashraful Alam (Microelectron. Reliab., 2014)

Physics-based compact models for insulated-gate field-effect biosensors, landau-transistors, and thin-film solar cells. - Muhammad Ashraful Alam; Piyush Dak; Muhammad A. Wahab; Xingshu Sun (CICC, 2015)

Characterization and reliability of III-V gate-all-around MOSFETs. - Mengwei Si; SangHoon Shin; Nathan J. Conrad; Jiangjiang Gu; Jingyun Zhang; Muhammad Ashraful Alam; Peide D. Ye (IRPS, 2015)

Editorial IEEE Access Special Section Editorial: Nanobiosensors. - Muhammad Ashraful Alam; Oguz H. Elibol; Anisul Haque (IEEE Access, 2015)

BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs. - Jifa Hao; Amartya Ghosh; Mark Rinehimer; Joe Yedinak; Muhammad Ashraful Alam (IRPS, 2018)

High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics. - SangHoon Shin; Yen-Pu Chen; Woojin Ahn; Honglin Guo; Byron Williams; Jeff West; Tom Bonifield; Dhanoop Varghese; Srikanth Krishnan; Muhammad Ashraful Alam (IRPS, 2018)

Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits. - Woojin Ahn; Sang Hoon Shin; Chunsheng Jiang; Hai Jiang; M. A. Wahab; Muhammad Ashraful Alam (Microelectron. Reliab., 2018)

An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies. - Woojin Ahn; Yen-Pu Chen; Muhammad Ashraful Alam (IRPS, 2019)

A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors. - Yen-Pu Chen; Bikram Kishore Mahajan; Dhanoop Varghese; Srikanth Krishnan; Vijay Reddy; Muhammad Ashraful Alam (IRPS, 2020)

Resilient Cyberphysical Systems and their Application Drivers: A Technology Roadmap. - Somali Chaterji; Parinaz Naghizadeh; Muhammad Ashraful Alam; Saurabh Bagchi; Mung Chiang; David Corman; Brian J. Henz; Suman Jana; Na Li; Shaoshuai Mou; Meeko Oishi; Chunyi Peng 001; et al. (CoRR, 2020)

Training and Classification using a Restricted Boltzmann Machine on the D-Wave 2000Q. - Vivek Dixit; Raja Selvarajan; Muhammad Ashraful Alam; Travis S. Humble; Sabre Kais (CoRR, 2020)

Training a quantum annealing based restricted Boltzmann machine on cybersecurity data. - Vivek Dixit; Raja Selvarajan; Muhammad Ashraful Alam; Travis S. Humble; Sabre Kais (CoRR, 2020)

Generalized Modeling Framework of Metal Oxide-Based Non-Enzymatic Glucose Sensors: Concepts, Methods, and Challenges. - Xin Jin; Muhammad Ashraful Alam (IEEE Trans. Biomed. Eng., 2020)

Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique. - Bikram Kishore Mahajan; Yen-Pu Chen; Dhanoop Varghese; Vijay Reddy; Srikanth Krishnan; Muhammad Ashraful Alam (IRPS, 2021)

Principles of Solar Cells - Connecting Perspectives on Device, System, Reliability, and Data Science - Muhammad Ashraful Alam; M. Ryyan Khan (Principles of Solar Cells, 2022)

A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors. - Bikram Kishore Mahajan; Yen-Pu Chen; Muhammad Ashraful Alam; Dhanoop Varghese; Srikanth Krishnan; Vijay Reddy (IRPS, 2022)

Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors. - Bikram Kishore Mahajan; Yen-Pu Chen; Ulisses Alberto Heredia Rivera; Rahim Rahimi; Muhammad Ashraful Alam (IRPS, 2022)

Reduced Relative Humidity (RH) Enhances the Corrosion-Limited Lifetime of Self-Heated IC: Peck's equation Generalized. - Md. Asaduz Zaman Mamun; Muhammad Ashraful Alam (IRPS, 2022)

A Critical Analysis of Bifacial Solar Farm Configurations: Theory and Experiments. - Jabir Bin Jahangir; Md. Al-Mahmud; Md. Shahadat Sarker Shakir; Anisul Haque; Muhammad Ashraful Alam; M. Ryyan Khan (IEEE Access, 2022)

Techno Economic Modeling for Agrivoltaics: Can Agrivoltaics be more profitable than Ground mounted PV? - Habeel Alam; Muhammad Ashraful Alam; Nauman Zafar Butt (CoRR, 2022)

Steady-State and Transient Performance of Ion-Sensitive Electrodes Suitable for Wearable and Implantable Electro-Chemical Sensing. - Xin Jin; Ajanta Saha; Hongjie Jiang; Muhammed Ramazan Oduncu; Qingyu Yang; Sotoudeh Sedaghat; Kerry Maize; Jan P. Allebach; Ali Shakouri; Nicholas Glassmaker; Alexander Wei 002; Rahim Rahimi; et al. (IEEE Trans. Biomed. Eng., 2022)

Training a Quantum Annealing Based Restricted Boltzmann Machine on Cybersecurity Data. - Vivek Dixit; Raja Selvarajan; Tamer Aldwairi; Yaroslav Koshka; Mark A. Novotny; Travis S. Humble; Muhammad Ashraful Alam; Sabre Kais (IEEE Trans. Emerg. Top. Comput. Intell., 2022)

Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical Failures. - Md. Asaduz Zaman Mamun; Amar Mavinkurve; Michiel van Soestbergen; Muhammad Ashraful Alam (IRPS, 2023)

Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified. - Sruthi M. P; Md. Asaduz Zaman Mamun; Deleep R. Nair; Anjan Chakravorty; Nandita DasGupta; Amitava DasGupta; Muhammad Ashraful Alam (IRPS, 2023)

Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. - Zhuocheng Zhang; Zehao Lin; Chang Niu; Mengwei Si; Muhammad Ashraful Alam; Peide D. Ye (VLSI Technology and Circuits, 2023)

MetaPhysiCa: OOD Robustness in Physics-informed Machine Learning. - S. Chandra Mouli; Muhammad Ashraful Alam; Bruno Ribeiro 001 (CoRR, 2023)

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges. - Nicolò Zagni; Francesco Maria Puglisi; Paolo Pavan; Muhammad Ashraful Alam (Proc. IEEE, 2023)

MetaPhysiCa: Improving OOD Robustness in Physics-informed Machine Learning. - S. Chandra Mouli; Muhammad Ashraful Alam; Bruno Ribeiro 001 (ICLR, 2024)

Robustness of Quantum Federated Learning (QFL) Against "Label Flipping Attacks" for Lithography Hotspot Detection in Semiconductor Manufacturing. - Amandeep Singh Bhatia; Sabre Kais; Muhammad Ashraful Alam (IRPS, 2024)

Validating Supply Chain against Recycled COTS ICs using I/O Pad Transistors: A Zero-Area Intrinsic Odometer Approach. - Md. Asaduz Zaman Mamun; Nathan J. Conrad; Saeed Mohammadi; Muhammad Ashraful Alam (IRPS, 2024)

On the Robustness of Variational Quantum Classifier Against "Label Flipping Attacks" in Federated Learning for Semiconductor Manufacturing. - Amandeep Singh Bhatia; Sabre Kais; Muhammad Ashraful Alam (QCE, 2024)

Physics-guided machine learning predicts the planet-scale performance of solar farms with sparse, heterogeneous, public data. - Jabir Bin Jahangir; Muhammad Ashraful Alam (CoRR, 2024)

Demystifying the Use of IC Plastic packages for Space Applications. - Md. Asaduz Zaman Mamun; Greta Terzariol; Luke Fortner; Amar Mavinkurve; Muhammad Ashraful Alam (IRPS, 2025)

Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration. - Chun-An Shih; Mir Md Fahimul Islam; Sumi Lee; Peide D. Ye; Muhammad Ashraful Alam (IRPS, 2025)