10T Differential-Signal SRAM Design in a L4-NM FinFET Technology for High-Speed Application. - Motoi Ichihashi; Youngtag Woo; Muhammed Ahosan Ul Karim; Vivek Joshi; David Burnett (SoCC, 2018)

An Energy-Efficient and High Throughput in-Memory Computing Bit-Cell With Excellent Robustness Under Process Variations for Binary Neural Network. - Gobinda Saha; Zhewei Jiang; Sanjay Parihar; Xi Cao; Jack M. Higman; Muhammed Ahosan Ul Karim (IEEE Access, 2020)

Bias-Dependent Variation in FinFET SRAM. - Randy W. Mann; Meixiong Zhao; Oh Sung Kwon; Xi Cao; Sanjay Parihar; Muhammed Ahosan Ul Karim; Jack M. Higman; Joseph Versaggi; Rick Carter (IEEE Trans. Very Large Scale Integr. Syst., 2020)

Expanding Design Technology Co-Optimization Potentials with Back-Side Interconnect Innovation. - Byung-Sung Kim; Subin Choi; Jung Han Lee; Kwangmuk Lee; Jisoo Park; Jiwook Kwon; Saehan Park; Kwanyoung Chun; Harsono Simka; Aravindh Kumar; Muhammed Ahosan Ul Karim; Ken Rim; et al. (VLSI Technology and Circuits, 2024)