A 0.4-μm 3.3-V 1T1C 4-Mb nonvolatile ferroelectric RAM with fixed bitline reference voltage scheme and data protection circuit. - Byung-Gil Jeon; Mun-Kyu Choi; Yoonjong Song; Seung-Kyu Oh; Yeonbae Chung; Kang-Deog Suh; Kinam Kim (IEEE J. Solid State Circuits, 2000)

A 0.25-μm 3.0-V 1T1C 32-Mb nonvolatile ferroelectric RAM with address transition detector and current forcing latch sense amplifier scheme. - Mun-Kyu Choi; Byung-Gil Jeon; Nakwon Jang; Byung-Jun Min; Yoon-Jong Song; Sung-Yung Lee; Hyun-Ho Kim; Dong-Jin Jung; Heung-Jin Joo; Kinam Kim (IEEE J. Solid State Circuits, 2002)