A 256-Kb Dual-VCC SRAM Building Block in 65-nm CMOS Process With Actively Clamped Sleep Transistor. - Muhammad M. Khellah; Dinesh Somasekhar; Yibin Ye; Nam-Sung Kim; Jason Howard; Gregory Ruhl; Murad Sunna; James W. Tschanz; Nitin Borkar; Fatih Hamzaoglu; Gunjan Pandya; Ali Farhang; et al. (IEEE J. Solid State Circuits, 2007)